劉琦

劉琦，2014年獲國家優秀青年科學基金資助，2015年獲中國科學院盧嘉錫青年人才獎，2016年獲國家自然科學二等獎，2018年獲國家傑出青年科學基金資助，2019年獲中國科學院青年科學家獎。 ^[2] 

2007.09-2010.07，安徽大學電子工程信息學院與中國科學院微電子研究所聯合培養，博士

2004.09-2007.07，安徽大學電子信息工程學院，碩士

1998.09-2002.07，安徽大學物理系，本科 ^[3] 

2016.01-至今， 中國科學院微電子研究所，中國科學院微電子器件與集成技術重點實驗室，研究員 ^[3] 

2012.10-2016.01，中國科學院微電子研究所，納米加工與新器件集成技術實驗室，副研究員 ^[3] 

2012.8-2012.10，中國科學院微電子研究所納米加工與新器件集成技術實驗室，助理研究員 ^[3] 

2010.11-2010.08，中國科學院微電子研究所，博士後 ^[3] 

2007.07-2010.10，安徽大學電子信息工程學院，助教 ^[3] 

2020年5月至2021年擔任復旦大學芯片與系統前沿技術研究院教授。 ^[2] 

主要研究方向包括新型非易失存儲技術、神經形態器件、類腦計算、存算一體芯片及系統。

主持了國家重點研發計劃、國家自然科學基金委傑青、優青和重點等項目，作為課題負責人蔘與JKW基礎加強重點項目等。在Nat. Nano.、Nat. Electron.、Nat. Commun.、Adv. Mater.、Nano Lett.、IEEE EDL等期刊發表SCI論文100多篇，SCI他引6000多次，H因子40，獲得授權中國發明專利48項，美國發明專利5項。

曾獲得國家自然科學二等獎、電子學會科學技術進步一等獎、中科院青年科學家獎、中科院傑出科技成就獎等獎項。 ^[1] 

1.Xumeng Zhang, Ye Zhuo, Qing Luo, Zuheng Wu, Rivu Midya, Zhongrui Wang, Wenhao Song, Rui Wang, Navnidhi K. Upadhyay, Yilin Fang, Fatemeh Kiani, Mingyi Rao, Yang Yang, Qiangfei Xia, Qi Liu*, Ming Liu*, and J. Joshua Yang*, “An artificial spiking afferent nerve based on Mott memristors for neuronrobotics”, Nature Communications, 11, 51, (2020).

2.Luqi Tu^#, Rongrong Cao^#, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu*, Qi Liu*, Jianlu Wang*, Ming Liu, and Junhao Chu, “Ultrasensitive negative capacitance phototransistors”, Nature Communications, 11, 101, (2020).

3.Xiaolong Zhao, Jiebin Niu, Yang Yang, Xiangheng Xiao*, Rui Chen, Zuheng Wu, Ying Zhang, Hangbing Lv, Shibing Long*, Qi Liu*, Changzhong Jiang, and Ming Liu, “Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application”, Nanotechnology, 31, 144002, (2020).

4.Guangjian Wu, Bobo Tian, Lan Liu, Wei Lv, Shuang Wu, Xudong Wang, Yan Chen, Jingyu Li, Zhen Wang, Shuaiqin Wu, Hong Shen, Tie Lin, Peng Zhou*, Qi Liu, Chungang Duan, Shantao Zhang, Xiangjian Meng, Shiwei Wu, Weida Hu, Xinran Wang, Junhao Chu, and Jianlu Wang*, “Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains”, Nature Electronics, 3, 43-50, (2020).

5.Yi Ding, Lan Liu, Jiayi Li, Rongrong Cao, Yu-Gang Jiang, Chunsen Liu*, Qi Liu*, and Peng Zhou*, “A semi-floating memory with 535% enhancement of refresh time by local field modulation”, Advanced Functional Materials, 30, 1908089, (2020).

6.Chunsen Liu^#, Huawei Chen^#, Shuiyuan Wang^#, Qi Liu^#, Yu-Gang Jiang, David Wei Zhang, Ming Liu, and Peng Zhou*, “Two-dimensional materials for next-generation computing technologies”, Nature Nanotechnology, 545-557, (2020). (Review)

7.Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, and Ming Liu, “A highly CMOS compatible hafnia-based ferroelectric diode”, Nature Communications, 11, 1391, (2020).

8.Qingyu Chen, Min Lin, Zongwei Wang, Xiaolong Zhao, Yimao Cai*, Qi Liu*, Yichen Fang, Yuchao Yang, Ming He, and Ru Huang, “Low power Parylene-based memristors with a graphene barrier layer for flexible electronics applications”, Advanced Electronics Materials, 5 (9), 1800852, (2019).

9.Xiaobing Yan^#*, Qianlong Zhao^#, Andy Paul Chen, Jianhui Zhao, Zhenyu Zhou, Jingjuan Wang, Hong Wang, Lei Zhang, Xiaoyan Li, Zuoao Xiao, Kaiyang Wang, Cuiya Qin, Gong Wang, Yifei Pei, Hui Li, Deliang Ren, Jingsheng Chen, and Qi Liu*, “Vacancy-induced synaptic behavior in 2D WS₂ Nanosheet-Based Memristor for low-power neuromorphic computing”, Small, 15(24), 1901423 (2019).

10.Huawei Chen, Chunsen Liu, Zuheng Wu, Yongli He, Zhen Wang, Heng Zhang, Qing Wan, WeidaHu, David Wei Zhang, Ming Liu, Qi Liu*, and Peng Zhou*, “Time-tailoring van der Waals heterostructures for human memory system programming”, Advanced Science, 6, 1901072, (2019).

11.Xumeng Zhang, Zhongrui Wang, Wenhao Song, Rivu Midya, Ye Zhuo, Rui Wang, Mingyi Rao, Navnidhi K. Upadhyay, Qiangfei Xia, J. Joshua Yang*, Qi Liu*, Ming Liu*, “Experimental demonstration of conversion-based SNNs with 1T1R Mott neurons for neuromorphic inference”, IEDM, 134-137 (2019).

12.Wei Wang, Rui Wang, Tuo Shi, Jinsong Wei, Rongrong Cao, Xiaolong Zhao, Zuheng Wu, Xumeng Zhang, Jian Lu, Qingjiang Li*, Qi Liu*, and Ming Liu, “A self-rectification and quasi-linear analogue memristor for artificial neural networks”, IEEE Electron Device Letters, 40, 1407-1410, (2019).

13.Rongrong cao, Bing Song, Dashan Shang, Yang Yang, Qing Luo, Shuyu Wu, Yue Li, Yan Wang*, Hangbing Lv, Qi Liu*, and Ming Liu, “Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode”, IEEE Electron Device Letters, 40, 1744-1747, (2019).

14.Xiaobing Yan^#*, Jianhui Zhao#, Sen Liu, Zhenyu Zhou, Qi Liu*, Jingshen Chen, and Xiangyang Liu*, “Memristor with Ag-cluster-doped TiO₂ films as artificial synapse for neuroinspired computing”, Advanced Functional Materials, 28, 170532, (2018). (Inside Front Cover)

15.Xiaolong Zhao^#, Jun Ma^#, Xiangheng Xiao^#, Qi Liu*, Lin Shao, Di Chen, Sen Liu, Jiebin Niu, Xumeng Zhang, Yan Wang, Rongrong Cao, Wei Wang, Zengfeng Di*, Hangbing Lv, Shibing Long and Ming Liu*, “Breaking current-retention dilemma in cation-based resistive switching device graphene with controlled defects”, Advanced Materials, 30, 1705193, (2018). (Inside Back Cover)

16.Xumeng Zhang^#, Wei Wang^#, Qi Liu*, Xiaolong Zhao, Rongrong Cao, Zhihong Yao, Xiaoli Zhu, Feng Zhang, Hangbing Lv, Shibing Long and Ming Liu, “An artificial neuron based on a threshold switching memristor”, IEEE Electron Device Letters, 39, 308-311, (2018).

17.Rongrong Cao, Yan Wang, Shengjie Zhao, Yang Yang, Xiaolong Zhao, Wei Wang, Xumeng Zhang, Hangbing Lv, Qi Liu*, and Ming Liu, “Effects of capping electrode on ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films”, IEEE Electron Device Letters, 39, 1207-1210, (2018).

18.Xiaolong Zhao^#, Sen Liu^#, Jiebin Niu^#, Lei Liao, Qi Liu*, Xiangheng Xiao*, Hangbing Lv, Shibing Long, Writam Banerjee, Wenqing Li, Shuyao Si, and Ming Liu*, “Confining cation injection to enhance CBRAM performance by nanopore graphene layer”, Small, 13, 1603948, (2017). (Inside Front Cover)

19.Rongrong Cao^#, Sen Liu^#, Qi Liu*, Xiaolong Zhao, Wei Wang, Xumeng Zhang, Facai Wu, Quantan Wu, Yan Wang, Hangbing Lv, Shibing Long, and Ming Liu, “Improvement of device reliability by introducing a BEOL-compatible TiN barrier layer in CBRAM”, IEEE Electron Device Letters, 38, 1371-1374, (2017).

20.Sen Liu^#, Nianduan Lu^#, Xiaolong Zhao^#, Hui Xu, Writam Banerjee, Hangbing Lv, Shibing Long, Qingjiang Li, Qi Liu*, and Ming Liu*, “Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory”, Advanced Materials, 28, 10623-10629, (2016). (inside back cover)

21.Haitao Sun, Qi Liu*, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li and Ming Liu*, “Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology”, Advanced Functional Materials, 24, 5679-5689, (2014).

22.Qi Liu^#, Jun Sun^#, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Litao Sun, and Ming Liu*, “Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM,” Advanced Materials, 24, 1844-1849, (2012). (inside cover)

23.Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebing Niu, Zongliang Huo, Junning Chen, and Ming Liu*, “Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode”, ACS Nano, 4, 6162-6168, (2010). ^[1]