複製鏈接
請複製以下鏈接發送給好友
https://baike.baidu.hk/item/康俊勇/6889534
複製
複製成功

康俊勇

鎖定
康俊勇，男，廈門大學教授、博士生導師，廈門大學“物理學”一級學科博士點、“微電子學與固體電子學”二級學科工科博士點學術帶頭人、“凝聚態物理”國家重點學科主要學術帶頭人。長期從事化合物半導體晶體生長及其特性表徵的教學和科研工作。培養研究生60餘人，所指導的10多篇博士論文中，獲得全國優秀博士學位論文1篇，提名全國優秀博士論文1篇，福建省優秀博士論文獎一等獎3篇等；帶領學生先後獲得2017年國際第三代半導體創新創業大賽廈門賽區團隊第一名、2019全國移動互聯創新大賽福建賽區一等獎等，榮獲“全國優秀博士學位論文指導教師”、“廈門市優秀教師”、“寶鋼優秀教師獎”、“盧嘉錫優秀導師獎”等稱號。 [1] 
中文名
康俊勇
國    籍
中國
民    族
漢族
主要成就
2014年獲全國優秀博士學位論文指導教師
學    歷
博士研究生
職    稱
教授

目錄

  1. 1 人物簡介
  2. 2 研究方向
  3. 3 獲獎
  1. 4 主要科研項目
  2. 5 主要發表論文
  3. 6 授權專利
  1. 7 學術兼職

康俊勇人物簡介

主持過國家“973”、“863”、國家自然科學基金重大研究計劃和重點項目等數十項研究。先後研發了首台強磁場晶體生長、納米級空間分辨率應變和電荷測試、原位納米結構綜合測試等設備。在高Al組分AlGaN量子結構等設計與生長及其深紫外表面等離子激元光源研發方面，取得了系列開拓性成果，被同行稱為“表面等離子激元深紫外光子學研究第一人”。在新型太陽能電池研發方面，首次將寬帶隙半導體調製到對太陽光中紅外線有效吸收，該成果2012年以“廈大研發新型太陽能光伏電池”名稱被列入最新十二大太陽能光伏電池新技術。在低維晶格及其耦合誘導的半導體新功能及其應用方面，取得多項重要的研究進展，獲得了國內外同行的高度評價。先後在Nature Materials、Nature Communications、Nano Letters、Advanced Materials、Laser Photonics & Reviews等國際著名學術刊物上發表論文300餘篇，他引約4500次；授權國家發明專利50餘項；部分成果完成了向重要企業的技術轉讓，並實現產品產業化，年產值十多億元，部分產品在國家航空航天領域得到廣泛應用。榮獲國家政府特殊津貼、福建省科技進步一等獎、廈門市科技進步一等獎等。 [1] 
先後建立了超高真空、極低温、強磁場、晶體生長及原位綜合測量等實驗條件；建立了福建省半導體材料及應用重點實驗室、半導體微納光電子材料與器件教育部工程研究中心，被譽為“廈門大學實驗物理奠基人”。榮獲“福建省先進工作者”、“廈門市勞動模範”等稱號。同時，推動了國家半導體照明產業化基地（廈門）的建設工作，牽頭與企業等創建了福建省半導體光電材料及其高效轉換器件協同創新中心，為廈門成為國家乃至世界的半導體產業重鎮做出重要貢獻，榮獲“廈門市科技創新傑出人才”。 [1] 

康俊勇研究方向

凝聚態物理
半導體材料物理
表面和界面物理
量子結構材料物理
微電子學與固體電子學
大功率LED
深紫外LED
新型太陽能電池 [1] 

康俊勇獲獎

2014年獲全國優秀博士學位論文指導教師
2017年以第一完成人獲福建省科技進步一等獎
2017年以第一完成人獲廈門市科技進步一等獎
2014年獲國家政府特殊津貼
2018年獲福建省先進工作者
2014年獲廈門市勞動模範
2004年廈門市優秀教師
2019年廈門市科技創新傑出人才
2018年獲寶鋼優秀教師獎
2015年獲盧嘉錫優秀導師獎 [1] 

康俊勇主要科研項目

1. 國家重點研發計劃課題，非平衡條件下AlGaN基量子結構的外延生長和深紫外發光規律；
2. 國家自然科學基金委重點項目，AlGaN基量子結構材料及其大功率深紫外光源；
3. 國家自然科學基金委重點專項，強磁場下半導體/磁性材料異質結構外延及原位自旋相關輸運檢測系統；
4. 科技部-973計劃課題，AlGaN基UV發光材料及其器件應用；
5.科技部-863計劃項目，GaN基半導體材料設計與關鍵外延技術開發；
6. 福建省教育廳，半導體光電材料及其高效轉換器件協同創新中心。 [1] 

康俊勇主要發表論文

1. Fabrication of high-voltage flip chip deep ultraviolet light-emitting diodes using an inclined sidewalls structure, Phys. Status Solidi A (2019) 1900059.
2. The construction of integrated Si-based micro proton exchange membrane fuel cells with improved performances, Nano Energy 61 (2019) 604.
3. Integral monolayer-scale featured digital-alloyed AlN/GaN superlattices using hierarchical growth units, Cryst.Growth Des. 19(3) (2019) 1720.
4. Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4A degrees 4H-SiC Epitaxial Wafers, J. Electronic Materials 47(9) (2018) 5109.
5. In-plane Anisotropy of Quantum Transport in Artificial Two-dimensional Au Lattices, Nano Lett. 18(3) (2018) 1724.
6. Characteristics of InN epilayers grown with H2-assistance, AIP Advances 7 (2017) 115207.
7. Interfaces between hexagonal andcubic oxides and their structurealternatives, Nature Com. 8 (2017) 1474.
8. Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4 (2017) 2197.
9. Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs, RSC Adv., 7 (2017) 55157.
10. Effect of Surface Morphology and Magnetic Impurities on theElectronic Structure in Cobalt-Doped BaFe2As2 Superconductors, Nano Lett. 17 (2017) 1642.
11. Reduction of epitaxial defects on 4-off 4H-SiC homoepitaxial growth by optimizing in-situ etching process, Superlattices and Microstructures 99 (2016) 145.
12. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6 (2016) 21897.
13. Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO, Nanoscale, 2016, 8, 4381.
14. Effects of thermally-induced changes of Cu grainson domain structure and electrical performanceof CVD-grown grapheme, Nanoscale8 (2016) 930.
15. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, Scientific Reports 5 (2015) 17227.
16. Ultrawide photoresponse in ZnO/ZnSe coaxialnanowires with a threshold of 0.8 eV, International Journal of Hydrogen Energy 40 (2015) 10788.
17. Electro-optic Coefficient Enhancement of AlxGa1−xN via Multiple FieldModulations, ACS Appl. Mater. Interfaces 2015, 7, 17707.
18. Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7´7) Surface, Nano-Micro Lett. 7(2) (2015)194.
19. Performance evaluation of multi-junction solarcells by spatially resolved electroluminescencemicroscopy, Nanoscale Research Letters10 (2015) 40.
20. Beneficial effect of alloy disorder on the conversionefficiency of ZnO/ZnxCd1-xSe coaxial nanowiresolar cells, J. Mater. Chem. A 3 (2015) 6360.
21. High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium-Ion Batteries, Adv. Funct. Mater. 25 (2015) 1386-1392.
22. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale 6 (2014) 14733.
23. Two-dimensional Au lattices featuring uniquecarrier transport preference and wide forbiddengap, Nanoscale 6 (2014) 10118.A beyond near-infrared response in awide-bandgap ZnO/ZnSe coaxial nanowiresolar cell by pseudomorphic layers, J. Mater. Chem. A 2 (2014) 14571.
24. High density GaN/AlN quantum dots fordeep UV LED with high quantumefficiency and temperature stability, Scientific Reports 4 (2014)5166.
25. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, Scientific Reports, 4 (2014)4380.
26. High Mg effective incorporation in Al-richAlxGa1-xN by periodic repetition of ultimate V/IIIratio conditions, Nanoscale Research Letters 9(1) (2014) 40.
27. The InN epitaxy via controlling In bilayer, Nanoscale Research Letters 9(1) (2014) 5.
28. Enhanced reversible lithium storage in germanium nano-island coated 3D hexagonal bottle-like Si nanorod arrays, Nanoscale, 6 (3) (2014) 1817.
29. Vacuum Rabi splitting of exciton-polariton emission in an AlN film, Scientific Reports, 3 (2013) 3551.
30. Crystal structure evolution of individual graphene islands during CVD growth on copper foil, Adv. Mater. 25 (2013) 6744.
31. Copper nanowires as fully transparent conductive electrodes, Scientific Reports, 3 (2013) 2323
32. Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C 117 (2013) 14158.
33. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, Laser and Photonics Rev. 7(4) (2013) 572.
34. Propagation and enhancement of ultraviolet radiation in metal-dielectricnanocables assisted by surface plasmon polaritons, Appl. Phys. Lett. 102 (2013) 171601.
35. Type-II Core/Shell Nanowire Heterostructuresand Their Photovoltaic Applications, Nano-Micro Lett. 4(3) (2012) 135.
36. The band edge emission enhancement by the quadrupole surface plasmon-exciton coupling using direct-contact Ag/ZnO nanospheres, Nanoscale, 5 (2012) 574.
37. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaNmulti-quantum wells, Scientific Reports 2 (2012) 816.
38. Tuning the dopingtype and level of graphene with different gold configurations, Small 8(20) (2012) 3129.
39. Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, J. Appl. Phys. 111 (2012) 113528.
40. Kinetic-dynamic properties of different monomers and two-dimensional homoepitaxy growth on the Zn-polar (0001) ZnO surface, Crystal Growth & Design, 12(6) (2012) 2850.
41. Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, J. Appl. Phys. 111 (2012) 113710.
42. Thermal Conductivity of Isotopically Modified Graphene, Nature Mater., 11(3) (2012) 203.
43. Synthesis and characterization of large-area graphene and graphite films on commercial Cu-Ni alloy foils, Nano Lett. 11(9), (2011), 3519.
44. Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) (2011) 775.
45. An all inorganic type II heterojunction solar cell based on a ZnO/ZnSe core/shell nanowire array with nearly full spectral response, J. Mat. Chem. 21(16) (2011) 6020.
46.Raman measurements of thermal transport in suspended monolayer graphene of variable sizes in vacuum and gaseous environments, ACS Nano, 5 (1) (2011) 321.
47. Atomic structure and formation mechanism of identicallysized Au clusters grown on Si (111)-(7×7) surface, J. Chem. Phys. 133 (2010) 124706.
48. Growth kinetic processes of AlN molecules on the Al-polar surface of AlN, J. Phys. Chem. A114 (2010) 9028.
49. Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) (2010) 1272.
50. Optical anisotropy of AlN epilayer on sapphire substrate investigated byvariable-angle spectroscopic ellipsometry, Opt. Mater. 32 (2010) 891.
51. Origins and suppressions of parasitic emissions in ultravioletlight-emitting diode structures, J. Mater. Res., 25(6)(2010) 1037.
52. Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, Appl. Phys. Lett. 96 (2010)101115.
53. Initial stages of Mg adsorption on the Si (111)7X7 surface, J. Appl. Phys. 107 (2) (2010) 023505.
54. Non-contact nanoscale electrical measurements for embedded intrinsic charges by Auger electron spectroscopy, Nanotechnology 21(1) (2010) 015707.
55. Polarization effects on quantum levels in InN/GaN quantum wells, Nanotechnology 20(48) (2009) 485204.
56. Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices, Appl. Phys. Lett. 95(15) (2009), 151113.
57. Hierarchical lattice structure andformation mechanism of ZnOnano-tetrapods, Nanotechnology 20 (2009) 325709.
58. Band engineering in strained GaN/ultrathin InN/GaN quantum wells, Crystal Growth & Design 9(4) (2009) 1698.
59. Structural and electronic properties of identical-size Zn nanoclusters grown on Si(111)-(7×7) surfaces, J. Chem. Phys. 130 (2009) 024701.
60. Pressure induced wurtzite-to-zinc blende phase transition in ZnO at finite temperature, J. Mater. Res.,23 (2008)3347.
61. Enhancement in middle-ultraviolet emission in a surface-plasmon-assistedcoaxial nanocavity, Appl. Phys. Lett. 93(9) (2008) 091902.
62. Band-edge emission enhancement by longitudinal stress field in GaN, Appl. Phys. Lett. 93(8) (2008) 081908.
63. Au-induced charge redistribution on Si (111)-7x7 surface, Surf. Sci. 602(2) (2008) 638.
64. Quantized level transitions and modification in InGaN/GaN multiplequantum wells, Appl. Phys. Lett. 92(10) (2008) 101929.
65. Phase identification from electronic structures by Augerelectron spectroscopy, J. Mater. Res. 23 (1)(2008) 83.
66. Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant, Appl. Phys. Lett. 91 (15) (2007) 152106.
67. Phase transition of ultrathin AlN interlayer at AlGaN/GaN interface, Appl. Phys. Lett. 90 (12) (2007) 121909.
68. Thickness-dependent phase transition of AlxGa1-xN thin films on strained GaN, J. Phys. Chem. B 110 (2006) 10396.
69. Aligned Zn-Zn2SiO4 core-shell nanocables with homogenously intense ultraviolet emission at 300 nm, J. Phys. Chem. B 109 (2005) 15786.
70. High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN, Appl. Phys. Lett. 86 (2005) 211917.
71. Polarization effect on p-type doping efficiency in Mg- and Si-codoped wurtzite GaN from first-principles calculations, Phys. Rev. B71(3) (2005) 035216.
72. Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces, Phys. Rev. B 68 (7) (2003) 073305.
73. Dislocations around precipitates in AlGaN epilayers, J. Mater. Res. 17 (8) (2002) 2007.
74. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers, Mater. Sci. & Eng. B 91-92 (2002) 303.
75. Threading dislocations with edge components in GaN epilayer grown on Al2O3 substrates, J. Mater. Res. 16 (9) (2001) 2550.
76. Nanopipes in undoped AlGaN epilayers, J. Crystal Growth 229 (2001) 58.
77. Ultraviolet absorption spectra of amphoteric SnO2 nanocrystallites, Appl. Sur. Sci. 174(2001) 306.
78. Laplace defect spectroscopy for recognition of deep level fine structures, J. Crystal Growth 210 (2000) 247.
79. Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substrates, J. Crystal Growth 210 (2000) 157.
80. Precipitates in GaN epilayers grown on sapphire substrates, J. Mater. Res. 13 (1998) 2100.
81. Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique, J. Appl. Phys., 81 (1997) 905.
82. Misfit dislocations and stresses in GaN epilayers, Appl. Phys. Lett. 71 (1997) 2304-2306.
83. Influence of a high vertical magnetic field on Te dopant segregation in InSb grown by the vertical gradient freeze method, J. Crystal Growth 140 (1994) 435.
84. Effect of application of a magnetic field during crystal growth on the photoluminescence characteristics of Ge-doped liquid encapsulated Czochralski grown GaAs, J. Crystal Growth 135 (1994) 623.
85. The identification of Si donor states in AlxGa1-xAs by photoluminescence, J. Appl. Phys. 72 (1992) 1395.
86. Alloy random effect on the characteristics of DX center, Chinese Science Bulletin 34 (1989) 1258.
87.A multistate model for DX centers in AlxGa1-xAs alloy, J. Luminescence 40 & 41 (1988) 365. [1] 

康俊勇授權專利

1. 國家授權發明專利，分佈式布拉格反射與小面積金屬接觸複合三維電極，專利號201210319019.3（已轉讓）
2. 國家授權發明專利，多結太陽能電池及各子電池交流電致發光測試方法和裝置，專利號200910112669.9（已轉讓）
3. 國家授權發明專利，矢量強磁場下分子束外延及其原位表徵裝置，專利號201611236161.6
4. 國家授權發明專利，一種原位測試LED應力的拉曼測試系統及其測試方法，專利號201510288699.0
5. 國家授權發明專利，一種基於二維晶格的紫外單波長MSM光電探測器，專利號201310461747.2
6. 國家授權發明專利，一種納米結構量子態電注入發光測試方法，專利號201210026594.4
7. 國家授權發明專利，基於LED光源的杉木二步法組培快繁方法，專利號201210230906.3
8. 國家授權發明專利，選擇超晶格位置摻雜的p型Ⅲ族氮化物材料的製備方法，專利號200810071176.0
9. 國家授權發明專利，樹葉脈絡形大功率氮化鎵基發光二極管芯片的P、N電極，專利號200610092944.1
10. 國家授權發明專利，納米級高分辨應力測量方法，專利號200510078721.5 [1] 

康俊勇學術兼職

國家自然科學基金委員會專家評審組專家
中國真空學會理事、常務理事
中國光學學會理事
中國物理學會：半導體專業委員會、表面與界面物理專業委員會委員
中國有色金屬學會：寬禁帶半導體專業委員會副主任委員
福建省光電行業協會副會長 [1] 
參考資料