李建軍

2005.09－2009.06 華中科技大學，電子科學與技術專業，博士學位

2002.09－2005.06 華中科技大學，電子科學與技術專業，碩士學位

1998.09－2002.06 華中科技大學，電子科學與技術專業，學士學位

2013.07－至今 電子科技大學，副教授

2009.09－2013.06 電子科技大學，講師

非易失性存儲器及嵌入式應用

包括鐵電存儲器、阻變存儲器、Flash，以及基於非易失性存儲單元作為開關單元的現場可編程門陣列FPGA。

在國內外權威期刊以及國際會議上發表學術論文20餘篇，其中以第一作者在Thin Solid Films, Journal of Materials Science, Integrated Ferroelectrics, Chinese Physics Letters, 物理學報等期刊發表論文12篇，均為SCI收錄。申請中國發明專利3項，已授權1項。

[1] J.J. Li, P. Li, G.J. Zhang, J. Yu, Y.Y. Wu and X.Y. Wen. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films. Thin Solid Films. 519: 6021-6025, 2011

[2]J.J. Li, P. Li, G.J. Zhang, J. Yu, J. Li, W.M. Yang. Effect of annealing pressure on structure and properties of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method. Journal of Materials Science: Materials in Electronics, 22(3): 299-303, 2011

[3]J.J. Li, W.M. Yang and J. Yu. Characterization and First Principle Studies on Pb-substituted (Ba,Sr)TiO3 Ceramics. Integrated Ferroelectrics, 113: 75-82, 2009

[4]J.J. Li, J. Yu, J. Li, W.M. Yang and Y.B. Wang. Co-effect of Annealing Temperature and Ambient on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Films. Integrated Ferroelectrics, 110: 43-54, 2009

[5]J.J. Li, J. Li, G. Peng, Y.B. Wang and J. Yu. The Effect of A-site La and Nd Substitution on The Residual Stress of Bi4Ti3O12 Thin Films Fabricated by Sol-Gel Method. Integrated Ferroelectrics, 110: 80-86, 2009

[6]X.D. Xie, W. Li, J.J. Li, G. Wang. High performance floating-gate technology compatible antifuse. Electronics Letters, 49 (12): 763-764, 2013

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