反饋

廖蕾

（湖南大學物理學院教授）

鎖定

廖蕾，男，博士，1981年10月出生，現任湖南大學物理與微電子科學學院副院長，微納光電器件與應用教育部重點實驗室主任，教授，博士生導師。^[1]

中文名: 廖蕾
畢業院校: 中國科學院物理所
學位/學歷: 博士

專業方向: 物理學
任職院校: 湖南大學
性別: 男

廖蕾人物經歷

廖蕾教育經歷

2000年-2004年武漢大學物理學院本科

2004年-2009年武漢大學物理學院碩博連讀，導師：李金釵教授

2005年-2007年中國科學院物理所聯合培養，導師：王恩哥/白雪冬教授^[1]

廖蕾工作經歷

2017年-，湖南大學物理與微電子科學學院教授，學院副院長；微納光電器件與應用教育部重點實驗室主任

2011年-2016年武漢大學物理學院教授，微電子系系主任

2009年-2011年加州大學洛杉磯分校博士後，導師：段鑲鋒教授

2007年-2009年南洋理工大學千禧研究員導師：申澤襄/於霆教授^[1]

2021年-湖南大學半導體學院院長^[3]

政協湖南省第十三屆委員會委員^[4]

廖蕾學術兼職

國家重點研發計劃納米專項會評專家

SID（國際信息顯示協會）北京分會專業技術委員會委員

IEEE Senior Member

Journal of Physics D: Applied Physics 編委會成員^[1]

廖蕾研究領域

微電子學與固體電子學^[1]

廖蕾科研項目

主持國家重點研發計劃課題，國家自然科學基金大科學裝置聯合基金培育項目，面上項目，優秀青年項目，青年項目，教育部博士點基金，作為科研骨幹參加科技部重點基礎研究發展計劃（973），重大科學研究計劃納米專項，重點研發計劃和國家重大專項。^[1]

廖蕾學術成果

20篇代表論文列表 (總Citation＞10000, H = 61)

1. L .M Wang, X. M. Zou,* J. Lin, J. Y. Jiang, Y. Liu, X. Q. Liu, X. Zhao, Y. F. Liu,* J. C. Ho, and L. Liao* Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response ACS Nano 13, 4804, (2019)

2. B. Jiang, Z. Y. Yang, X. Q. Liu,* Y. Liu,* and L. Liao* Interface engineering for two-dimensional semiconductor transistors Nano Today 25, 122, (2019)

3. G. L. Li, A. Abliz, L. Xu, N. Andre, X. Q. Liu, Y. Zeng,* D. Flandre, and L. Liao* Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors Appl. Phys. Lett. 112, 253504, (2018)

4. X. Q. Liu, R. R. Liang, G. Y. Gao, C. F. Pan,* C. S. Jiang, Q. Xu, J. Luo, X. M. Zou, Z. Y. Yang, L. Liao,* Z. L. Wang* MoS2 Negative Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit Adv. Mater. 30, 1800932, (2018)

5. B. Jiang, J. Su, X. M. Zou, J. H. Liang, J. L. Wang, H. J. Liu, L. P. Feng, C. Z. Jiang, J. He,* L. Liao* Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors Adv. Funct. Mater. 28, 1801398, (2018)

6. Y. Liu, J. Guo, E. B. Zhu, L. Liao, S. J. Lee, M. N. Ding, I. Shakir, V. Gambin, Y. Huang,* X. F. Duan* Approaching the Schottky-Mott limit in van der Waals metal-semiconductor Junctions Nature 557, 696, (2018)

7. Z. Y. Yang, L. Liao,* F. Gong, F. Wang, Z. Wang, X. Q. Liu, X. H. Xiao, W. D. Hu, J. He,* X. F. Duan* WSe2/GeSe Heterojunction Photodiode with Giant Gate Tunability Nano Energy 49, 103, (2018)

8. A. Abliz, Q. G. Gao, D. Wan, X. Q. Liu, L. Xu, C. S. Liu*, C. Z. Jiang, X. F. Li, H. P. Chen, T. L. Guo, L. Liao* Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors ACS Applied Materials & Interface 9, 10798, (2017)

9. Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, J. Xiong*, L. Liao* Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors Adv. Funct. Mater. 27, 1602250, (2017)

10. J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. 28, 8302, (2016).

11. X. M. Zou, C. W. Huang, L. F. Wang, L. J. Yin, W. Q. Li, J. L. Wang, B. Wu, Y. Q. Liu, Q. Yao, C. Z. Jiang, W. W. Wu, L. He, S. S. Chen, J. Ho, L. Liao* Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors Adv. Mater. 28, 2062, (2016)

12. J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li, L. Liao* Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics. Small 11, 208, (2015)

13. X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*, L. Liao* Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors. Adv. Mater. 26, 7399, (2014)

14. X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*, L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors. Adv. Mater. 26, 6255, (2014)

15. X. M. Zou, J. L. Wang, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Y. Fang, L. Liao*, Rational Design of Sub-ppm Specific Gas Sensors Array based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors Nano Lett. 13, 3287, (2013)

16. X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan, L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance Transistor Nano Lett.12, 3596, (2012).

17. L. Liao, X. F. Duan Graphene Transistors for Radio Frequency Electronics Materials Today 15, 328, (2012).

18. L. Liao, J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y. Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass Nano Lett. 12, 2653, (2012).

19. L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K.. L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gate Nature 467, 305, (2010)

20. L. Liao, J. W. Bai, Y. Q. Qu, Y. C. Lin, Y. J. Li, Y. Huang, and X. F. Duan High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors PNAS107, 6711 (2010).^[1]