金智

吉林大學 電子工程系 獲博士學位

1999-2002 日本北海道大學 量子電子學研究中心

2002-2004 德國Duisbur-Essen大學

2004-2006 日本電氣通信大學

2006-至今 中國科學院微電子研究所

超高頻InP基三端電子器件、毫米波電路、化合物半導體超高速數模混合電路

微電子學與固態電子學

[1] Jin Zhi, YB Su, et al. “Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz,” Solid-State Electronics

[2] Jin Zhi, Liu Xinyu, “On the design of base-collector junction of InGaAs/InP DHBT,” Science in China Series E: Technological Sciences

[3] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High Current Multi-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz,” Chin

[4] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz,” Chin

[5] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage,” Chin

[6] Jin Zhi, Liu Xinyu, Wener Prost, F.-J. Tegude, “Surface-recombination-free InGaAs/InP HBTs and the base contact recombination,” Solid-State Electronics, Vol

[7] Jin Zhi, W. Prost, S. Neumann, F.-J. Tegude, “Current transport mechanism and its effects on the performance of InP-based double heterojuction bipolar transistors with different base structures,” Applied Physics Letters

[8] Jin Zhi, S. Neumann, W. Prost, F.-J. Tegude, “Surface recombination mechanism in graded- base InGaAs/InP hetero- structure bipolar transistors,” IEEE Trans

973項目“新一代化合物半導體器件和電路研究”子課題“新結構HBT器件”（2008年完成）

院裝備研製項目“3毫米微波器件與電路在片綜合測試系統”（2007-2009）

“百人計劃”項目（2009-2011）

973項目“超高頻大功率化合物半導體基礎問題研究”子課題“太赫茲三端電子器件研究”（2010-2015） ^[1]