邱曉燕

2017/07-2017/09 香港理工大學應用物理系 SeniorVisiting Scholar

2014/07-2014/09 香港理工大學應用物理系 ResearchFellow

2012/08-2013/08 美國德州大學聖安東尼奧分校 Visiting Scholar

2006/08-2007/01 香港理工大學應用物理系 ResearchAssistant

1. 重慶自然科學麪上項目(cstc2019jcyj-msxmX0451)- 適用於人工神經突觸的低壓穩定多態電阻開關研究, 10萬元, 2019.07-2022.07 ^[1] 

2. 中央高校基本科研業務費重點項目(XDJK2018B034)- 應用於人工神經元的低壓高性能電阻開關單元的製備與性能研究, 20萬元, 2018.05-2020.12

3. 國家自然科學基金面上項目(11274257)-鑲嵌金屬納米微粒鉿基氧化物薄膜微結構調控的磁電性能,,84萬元,2013.01-2016.12

4. 國家自然科學青年基金項目(10904124)-HfAlO_x介電薄膜d⁰鐵磁性與介電性的集成可行性探究, 23萬元, 2010.01-2012.12

5. 重慶市自然科學基金項目(cstc2014jcyjA40029)-磁性氧化物單相薄膜的製備與阻變特性, 5萬元, 2014.07-2017.06

6. 中央高校基本科研業務費重點項目(XDJK2014B043)-基於γ-Fe₂O₃薄膜的磁/電阻變存儲器研究, 10萬元, 2014.05-2016.05

7. 中央高校基本科研業務費專項基金(XDJK2011C038)-非磁氧化物薄膜界面微結構調控的磁電效應, 4萬元, 2011.05-2014.05

8. 重慶市自然科學基金項目(CSTC2007BB4352)-高介電柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 2萬元, 2007.07-2009.07.

9. 西南大學博士基金項目(SWUB2007007)-高介電常數柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 3萬元, 2007.04-2009.04

代表論文

個人代表性科研論文： ^[1] 

X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO₂ buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103

X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlO_X films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次數31次)

研究組近年發表的代表性科研論文(按發表時間倒序排列)： ^[1] 

X. Jiang, M. L. Wei, C-H Chan,Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, andX. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO₃ films. Appl. Phys. Lett. 2020,116: 102101

Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*.Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH₃NH₃PbI₃ films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101

W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, andX. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite C_H3N_H3Pb_I3 solar cell with NiO hole transport layer (in Chinese).Sci Sin-Phys Mech Astron, 2019, 49: 017001

T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO₂ films, J. Phys. D: Appl. Phys. 2018, 51 : 305105

X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335

X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO₂ buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103

X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217

R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9

X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797

H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO_x film, AIP Advances, 2016, 6: 055004

H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiO_x films, Materials Science Forum, 2016, 847: 131-136

Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al₂O₃ single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015

X. Y. Qiu*,G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si₈₃Ge₁₇/Si substrate, Thin Solid Films,2014(562): 674–679

X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013(141): 145-153

Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*,Effect of HfO_x buffer layer on the resistive switching characteristics of g-Fe₂O₃ nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.

G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*,Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012(134): 13-15

X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si₈₃Ge₁₇ grown by RF magnetron sputtering, Microelectronic Engineering,2009 (86): 2247-2250

X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlO_x thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006(89): 242504

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlO_X films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006(88): 072906

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006 (88): 182907

X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAl_xSi_yO_z films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006 (100): 074109

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu* , Thermal stability and dielectric properties of ultrathin CaZrO_x films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005 (81): 1431-1434

獲獎情況

2019年,第四屆重慶市大學生物理創新競賽(二等獎)指導教師； ^[1] 

2018年,西南大學2016-2018學年度優秀教師；

2017年,西南大學物理學院第八屆教師教學技能比賽一等獎；

2016年,西南大學本科生優秀畢業論文(一等獎)指導教師；

2015年,第二屆重慶市大學生物理創新競賽(三等獎)指導教師；

2010年,重慶市自然科學三等獎(排名第四). ^[1] 

1. 重慶自然科學麪上項目(cstc2019jcyj-msxmX0451)- 適用於人工神經突觸的低壓穩定多態電阻開關研究, 10萬元, 2019.07-2022.07 ^[1] 

2. 中央高校基本科研業務費重點項目(XDJK2018B034)- 應用於人工神經元的低壓高性能電阻開關單元的製備與性能研究, 20萬元, 2018.05-2020.12

3. 國家自然科學基金面上項目(11274257)-鑲嵌金屬納米微粒鉿基氧化物薄膜微結構調控的磁電性能,,84萬元,2013.01-2016.12

4. 國家自然科學青年基金項目(10904124)-HfAlO_x介電薄膜d⁰鐵磁性與介電性的集成可行性探究, 23萬元, 2010.01-2012.12

5. 重慶市自然科學基金項目(cstc2014jcyjA40029)-磁性氧化物單相薄膜的製備與阻變特性, 5萬元, 2014.07-2017.06

6. 中央高校基本科研業務費重點項目(XDJK2014B043)-基於γ-Fe₂O₃薄膜的磁/電阻變存儲器研究, 10萬元, 2014.05-2016.05

7. 中央高校基本科研業務費專項基金(XDJK2011C038)-非磁氧化物薄膜界面微結構調控的磁電效應, 4萬元, 2011.05-2014.05

8. 重慶市自然科學基金項目(CSTC2007BB4352)-高介電柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 2萬元, 2007.07-2009.07.

9. 西南大學博士基金項目(SWUB2007007)-高介電常數柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 3萬元, 2007.04-2009.04

代表論文

個人代表性科研論文： ^[1] 

X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO₂ buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103

X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlO_X films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次數31次)

研究組近年發表的代表性科研論文(按發表時間倒序排列)： ^[1] 

X. Jiang, M. L. Wei, C-H Chan,Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, andX. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO₃ films. Appl. Phys. Lett. 2020,116: 102101

Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*.Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH₃NH₃PbI₃ films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101

W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, andX. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite C_H3N_H3Pb_I3 solar cell with NiO hole transport layer (in Chinese).Sci Sin-Phys Mech Astron, 2019, 49: 017001

T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO₂ films, J. Phys. D: Appl. Phys. 2018, 51 : 305105

X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335

X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO₂ buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103

X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217

R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9

X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797

H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO_x film, AIP Advances, 2016, 6: 055004

H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiO_x films, Materials Science Forum, 2016, 847: 131-136

Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al₂O₃ single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015

X. Y. Qiu*,G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si₈₃Ge₁₇/Si substrate, Thin Solid Films,2014(562): 674–679

X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013(141): 145-153

Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*,Effect of HfO_x buffer layer on the resistive switching characteristics of g-Fe₂O₃ nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.

G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*,Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012(134): 13-15

X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si₈₃Ge₁₇ grown by RF magnetron sputtering, Microelectronic Engineering,2009 (86): 2247-2250

X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlO_x thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006(89): 242504

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlO_X films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006(88): 072906

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006 (88): 182907

X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAl_xSi_yO_z films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006 (100): 074109

X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu* , Thermal stability and dielectric properties of ultrathin CaZrO_x films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005 (81): 1431-1434

2019年,第四屆重慶市大學生物理創新競賽(二等獎)指導教師； ^[1] 

2018年,西南大學2016-2018學年度優秀教師；

2017年,西南大學物理學院第八屆教師教學技能比賽一等獎；

2016年,西南大學本科生優秀畢業論文(一等獎)指導教師；

2015年,第二屆重慶市大學生物理創新競賽(三等獎)指導教師；

2010年,重慶市自然科學三等獎(排名第四). ^[1]