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胡曉東
(北京大學物理學院教授)
鎖定
- 中文名
- 胡曉東
- 國 籍
- 中國
- 民 族
- 漢族
- 畢業院校
- 北京大學
- 畢業院校
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清華大學
電子科技大學 - 職 業
- 教師
- 研究領域
- 光電子物理和器件研究
- 職 稱
- 教授
胡曉東簡歷
1978.2—1982.1 北京大學物理系,獲學士學位
1989.8 獲清華大學碩士學位
1992.12 獲得電子科技大學物理學與光電子學博士學位
1993.1—1995.7 清華大學博士後流動站
1995.8—2005.8 北京大學物理系副教授
1998.7—2000.7 美國德克薩斯大學奧斯丁分校,Research Fellow
2000.7—2001.4 美國堪薩斯州立大學 Associate Researcher
胡曉東研究領域
光電子物理和器件研究。近期工作主要是GaN基短波長激光器的研製和相應的物理研究。
胡曉東教學
本科生《基礎物理》主講。
胡曉東承擔的科研項目
主持國家863計劃課題《氮化鎵基短波長激光器創新結構和關鍵技術》,2007.12-2010.11
主持國家自然科學基金項目《GaN基量子異質結構和發光性質》,2008.1-2010.12
參與國家重大科學研究計劃課題《受限半導體量子體系調控及光學、輸送性質研究》2006.09-2008.8
胡曉東近期工作
Wei Yang and Xiaodong Hu,Comment on ‘‘Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films’’,107,159701(2011),Physical Review Letters
Lei Wang,Cimang Lu,Jianing Lu,Lei Liu,Ningyang Liu,Yujie Chen,Yanfeng Zhang,Erdan Gu,and Xiaodong Hu*,Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes,18 July 2011,Vol. 19,No. 15/Optics Express 14182
Lei Liu,Lei Wang,Ding Li,Ningyang Liu,Weihua Chen,ZheChuan Feng,Weimin Du and Xiaodong Hu*,Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures,Journal of Applied Physics,109 073106(2011)
Wang Yu-Zhou,Li Ding,Li Lei,Liu Ningyang,Liu Lei,Cao Wen-Yu,Chen Wei-Hua,and Xiaodong Hu*,Intersubband transitions in Al0.82In0.18N/GaN single quantum well,,Chin. Phys. B,Vol.20,No. 9(2011)094207
Lei Wang,Rui Li,Ding Li,Ningyang Liu,Lei Liu,Weihua Chen,Cunda Wang,Zhijian Yang,and Xiaodong Hu,Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer,Applied Physics Letters,96(06)061110,2010
Ziwen Yang,Rui Li,Tao Yu,Yanzhao Zhang,Weihua Chen,Xiaodong Hu*,Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field,Applied Physics Letters,94(6),061120(2009)
Li,R; Zhang,JM; Chen,L; Zhao,HB; Yang,ZW; Yu,T; Li,D; Liu,ZC; Chen,WH; Yang,ZJ; Zhang,GY; Gan,ZZ; Hu,XD*; Wei,QY; Li,T; Ponce,FA,Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure,Applied Physics Letters,94(21)211103,2009
Lei Wang,Rui Li,Ziwen Yang,Ding Li,Tao Yu,Ningyang Liu,Lei Liu,Weihua Chen,and Xiaodong Hu*,High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,APPLIED PHYSICS LETTERS 95(21),211104,2009
D Zhang,Z C Liu and X D Hu* Improved Multi-layer Stopper in the GaN-based Laser Diode,Semicond. Sci. Technol. 24(2009)045003(5pp)
W. H. Chen,X. D. Hu,X. D. Shan,X. N. Kang,X. R. Zhou,X. M. Zhang,T. J. Yu,K. Xu,Z. J. Yang,G. Y. Zhang ,Shock-assisted superficial hexagonal-to-cubic phase transition in GaN/sapphire interface induced by ultra-violet laser lift-off,Chinese Physics Letters,Vol. 26,016203(2009)
GAO Ting-Ge,YI Jue-Min,ZHOU Zi-Yao,HU Xiao-Dong*,First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride Chinese Physics Letters,2008,Vol.25,No.8,2989-2992
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- 參考資料
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- 1. 胡曉東 .北京大學物理學院教授[引用日期2012-09-05]