班士良

班士良，1956年1月生，蒙古族，內蒙古大學研究生學歷，博士，教授，中共黨員，曾任內蒙古大學校長助理、研究生院常務副院長。2011年11月2日任內蒙古大學黨委委員，內蒙古大學副校長 ^[2]  。

中國物理學會理事、教育部高等學校物理學類專業教學指導分委員會委員（2006-2010）、中國物理學會半導體物理專業委員會委員、全國熱力學與統計物理教學研究會秘書長、內蒙古物理學會理事長、內蒙古自治區高等學校半導體光伏技術重點實驗室主任、內蒙古自治區半導體光伏技術重點實驗室主任。

研究領域：凝聚態物理，半導體物理 。 ^[2] 

1978.3-1981.12 內蒙古大學物理學專業攻讀學士學位

1982.3-1985.12 內蒙古大學理論物理專業攻讀碩士學位

1996.9-1999.7 內蒙古大學理論物理專業攻讀博士學位

1988.9-1989.9 加拿大舍布魯克大學物理系訪問學者

1997.8-1998.8 美國西佐治亞州立大學物理系訪問學者

1985.12 –現在 分別在內蒙古大學物理系、理工學院物理系、物理科學與技術學院任教，1987年晉講師，1992年晉副教授，1995年晉教授

1995.3-1996.9 任內蒙古大學物理系副主任

1999.10-2008.2任內蒙古大學理工學院院長

2008.2-2009.3 任內蒙古大學物理科學與技術學院院長

2009.3-2011.11 任內蒙古大學研究生院常務副院長

2008.5-2011.11任校長助理

2011.11 任內蒙古大學副校長 ^[2] 

1、半導體異質結構和納米材料中電子態和載流子輸運等性質及其電子聲子相互作用等問題

2、新型薄膜太陽電池及材料的研製、機理分析和應用研究 ^[3] 

1. 主持 國家自然科學基金 “應變及壓力調製下半導體多層異質結構材料中的電子態”

2. 主持 內蒙古日月太陽能科技有限責任公司合作協作項目

3. 主持 包頭山晟新能源有限責任公司 “Si太陽電池改性” ^[3] 

1、Y. Qu and S. L. Ban，Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove, J. Appl. Phys. 110, 7(2011.7)

2、S. H. Ha，S. L. Ban and J. Zhu，Screened excitons in strained wurtzite AlxGa1−xN/GaN/AlyGa1−yN quantum wells， Phys. Status. Solidi C, 8（1）34-37(2011.1)

3、J. Zhu, S. L. Ban, and S. H. Ha, Binding Energies of Excitons in Strained [0001]-oriented Wurtzite AlGaN/GaN double quantum wells, Phys. Status. Solidi B, 248（2），384-388(2011.2)

4、 屈媛, 班士良，纖鋅礦氮化物量子阱中光學聲子模的三元混晶效應,物理學報，59（7），(2010.07)

5、M. Zhang and S.L. Ban, Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions, Chinese Physics B, 18(12), (2009.12)

6、M. Zhang and S.L. Ban, Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction, Chinese Physics B, 18(10), (2009.10)

7、Y. Qu and S. L. Ban,Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect, Eur. Phys. J. B (2009.6)

8、G. J. Zhao, X.. X. Liang and S. L. Ban, Polaron effect on the binding energies of excitons in quantum wells under hydrostatic pressure, Physica Status Solidi C, 6(1), (2009)

9、X. P. Bai and S. L. Ban, Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdxSe strained heterojunction，Chinese Physics, 17(12), (2008.12)

10、J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted magneto tunneling in a parabolic quantum well with double barriers, Physica E, 40(8), (2008)

11、S. H. Ha and S. L. Ban，Binding energies of excitons in a strained wurtzite GaN/AlGaN quantum well influenced by screening and hydrostatic pressure, J. Phys.: Condens. Matter, 20, (2008.02)

12、X. M. Jia and S. L. Ban, Optical phonon influence on the mobility of electrons in wurtzite and zincblende AlN/GaN quantum wells, J. Physics: Conference Series, (4 Pages) (2007.12)

13、G. D. Hao, S. L. Ban and X. M. Jia, Pressure effect on the mobility of electrons in AlAs/GaAs quantum wells, Chinese Physics, 16(12), (2007.12)

14、J. Gong, X. X. Liang and S. L. Ban, Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure, J. Appl. Phys. (2007.10)

15、X. P. Bai and S. L. Ban, Electron mobility in a realistic AlxGa1-xAs/GaAs heterojunction potential under pressure, Eur. Phys. J. (2007.08)

16、G. J. Zhao, X.. X. Liang and S. L. Ban, Effect of hydrostatic pressure on the binding energies of excitons in quantum wells, International Journal of Modern Physics B ,(2007.07)

17、J. Gong, X. X. Liang, and S. L. Ban, Tunneling time of electronic wave packet through a parabolic quantum well with double barriers, Phys. Status Solidi (b), (2007.06)

18、S. H. Ha and S. L. Ban, Screening influence on the binding energies of excitons in quantum wells under pressure, AIP Conference Proceedings, (2007.06)

19、Z. W. Yan, S. L. Ban and X. X. Liang, Polaron properties in ternary group-III nitride mixed crystals, AIP Conf. Proc. (2006)

20、X. L.Yu, S.L.Ban, Cyclotron resonance of a polaron in a realistic heterojunction and its pressure effect, Eur. Phys. J. (2006.08)

21、J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted tunneling in a parabolic quantum well with double barriers, J. Appl. Phys.,100（2）,（2006.7)

22、Z. Z. Guo, X. X. Liang and S. L. Ban, Interface excitons in a type-Ⅱ ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation, Physica Scripta, （2006.2）

23、Z. W. Yan, X. X. Liang and S. L. Ban, Intermediate-coupling poltarons in GaN, AlN, and InN, AIP Conference Proceedings, (2005)

24、S. L. Ban and S. T. Wang, Magnetic field effect on bound polarons in semiconductor heterojunctions under pressure, AIP Conference Proceedings, (2005)

25、J. Gong, X. X. Liang and S. L. Ban, Resonant tunneling in parabolic quantum well structures under a uniform transverse magnetic field, Chinese Physics, (2005)

26、Z. W. Yan, S. L. Ban and X. X. Liang, Intermediate-coupling polaron properties in wurtzite nitride semiconductors, Physics Letters A,(2004)

27、X. X. Liang and S. L. Ban, Optical vibration modes and electron-phonon interaction in ternary mixed crystals of polar semiconductors,Chinese Physics,( 2004.01)

28、Z. W. Yan, S. L. Ban and X. X. Liang, Pressure dependence of electron- IO- phonon interaction in multi-interface heterostructure systems, Int. J. of Modern Physics B, (2003. 03)

29、Z. W. Yan, S. L. Ban and X. X. Liang, Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure, Eur. Phys. (2003)

30、G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of donors in quantum wells under hydrostatic pressure, Physics Letters A 319,(2003)

31、Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure effect on the interface excitons in a type-Ⅱ ZnTe/CdSe heterojunction, Modern Phys. Lett. B,17 (27-28), (2003)

32、F. Q. Zhao, X. X. Liang and S. L. Ban, Influence of the spatially dependent effective mass on bound polarons in finite parabolic quantum wells, Eur. Phys. (2003)

33、Y. L. Cao, S. L. Ban and G. J. Zhao, The effect of Hydrostatic pressure on bound polarons in polar semiconductor heterojunctions, Modern Physics Letters B, (2003)

34、G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of excitons in GaAs/AlAs quantum wells under pressure, Modern Physics Letters B, (2003)

35、Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure-induced increase of exciton-LO-phonon coupling in a Zn1-xCdxSe/ZnSe quantum well, Phys. Stat. (2003)

36、Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure tuning of strains in Zn1-xCdxSe/ZnSe (x<0.1) single quantum wells, Phys. Lett. A, 306, (2002)

37、J. Gong, S. L. Ban and X. X. Liang, Resonant tunneling in semiconductor multibarrier heterostructures, Int. J. of Modern Physics B, (2002)

38、X. X. Liang and S. L. Ban, Note to electron-phonon interaction in polar ternary mixed crystals, Journal of Luminescence 94-95, (2001)

39、F. Q. Zhao, X. X. Liang and S. L. Ban, Energy levels of a polaron in a finite parabolic quantum well, I.J.M.Phys B 15(5),(2001)

40、Z. W. Yan, X. X. Liang and S. L. Ban, IO-phonon-assisted tunneling in asymmetric double-barrier structures, Phys Rev B64(12),(2001)

41、X. X. Liang, Z .P. Wang and S. L. Ban, Bound polarons in ternary mixed crystals, Journal of Luminescence, (2000)

42、S. L. Ban, J. E. Hasbun and X.X. Liang, A novel method for quantum transmission across arbitrary potential barriers, Journal of Luminescence, (2000)

43、S. L. Ban and J. E. Hasbun, Bound polarons in a polar semiconductor heterojunction, Phys. Rev. (1999)

44、S. L. Ban and J.E.Hasbun, Donor level in a quasi- two dimensional heterojunction system, Solid State Commun. (1999)

45、S. L. Ban and J. E. Hasbun, Interface polarons in a realistic heterojunction potential, Eur. Phys. (1999)

46、J. E. Hasbun and S. L. Ban, Optical-phonon scattering in quasi-two-dimensional heterojunction systems, Phys. Rev.(1998)

47、S. L. Ban and X. X. Liang, Interface polarons in a heterojunction with triangular bending-band, Eur. Phys. J.(1998)

48、X. X. Liang, S. L. Ban and R. S. Zheng, Effect of optical phonons on the binding energy of an exciton in a quantum well, J. Luminescence, (1997)

49、S. L. Ban, X. X. Liang and R. S. Zheng, Cyclotron resonance of two-dimensional interface polarons, Phys. Rev. (1995)

50、G. H. Yun, J. H. Yan, S. L. Ban and X. X. Liang, Properties of perfect confined modes and interface modes of spin- waves in a ferromagnetic bilayer system, Surf. Sci. (1994)

51、S. L. Ban, X. X. Liang and R. S. Zheng, Influence of interface phonons on a polaron near a polar semiconductive heterointerface, Phys. Lett A, (1994)

52、R. S. Zheng, S. L. Ban and X. X. Liang, Polaronic effect on the electron energy spectrum in a quantum well, J Phys. (1994)

53、R. S. Zheng, S. L. Ban and X. X. Liang, Effect of the interface and bulk optical phonons on the polarons in a quantum well, Phys. Rev. (1994)

54、S. L. Ban, R. S. Zheng, X. M. Meng and L. Y. Zhao, Temperature dependence of the N-dimensional polaron, J Phys. (1993)

55、G. H. Yun, J. H. Yan and S. L. Ban, Interface-rescaling approach to the exact solutions of quantum low -energy for a ferromagnetic bilayer system, Phys. Rev.(1992)

56. S. W. Gu and S. L. Ban, The ground state effective Hamiltonian of the strong coupling One- dimensional optical exciton, Phys. Stat. (1984)

^[3] 

1、1996 年獲國務院政府特殊津貼

2、1998年入選自治區“321人才工程”第一層次人選

3、1998年，異質結構材料中電子與聲子作用及相關問題的理論研究，內蒙古自治區科技進步三等獎

4、2001年入選自治區高等教育“111工程”第一層次人選

5、2002年入選自治區“新世紀321人才工程”第一層次人選

6、2002年被教育部授予“高等學校優秀骨幹教師”

7、2002年被授予“內蒙古自治區有突出貢獻中青年專家”稱號

8、2003年被自治區黨委、政府授予“優秀留學回國人員”稱號

9、2003年被評為自治區“十佳”優秀青年學科帶頭人

10、2005 年獲寶鋼優秀教師獎並被評為自治區勞動模範（先進工作者）

11、2005年，“熱物理”系列課程教學改革與建設，內蒙古自治區教學成果二等獎

12、2008年獲自治區高等學校教學名師獎

11、2009年，壓力下半導體異質結構中電子 — 聲子相互作用及相關問題，內蒙古自治區（首屆）自然科學獎三等獎（2007年度）

12、2009年，國家精品課程《統計熱力學》改革與建設，內蒙古自治區教學成果一等獎

13、2009年，數理科學創新型基礎人才培養與數理學基地建設，內蒙古自治區教學成果二等獎 ^[3] 

14、2019年9月5日，被人力資源社會保障部、教育部授予“全國模範教師”稱號，享受省部級表彰獎勵獲得者待遇。 ^[1]