劉大猛

2004.9 - 2009.7 劍橋大學電子工程學專業博士

2001.9 - 2004.7 北京大學凝聚態物理專業碩士

1997.9 - 2001.7 北京大學物理學院學士 ^[1] 

2009.11 – 至今，清華大學機械工程系摩擦學國家重點實驗室，助研 ^[1] 

原子尺度固體潤滑材料物性研究

過度金屬氮化物硬質塗層研究 ^[1] 

近年來先後承擔或參與金屬氮化物、氧化物薄膜材料、微納加工工藝、表面圖案製備工藝、激光在表面技術中的應用等相關課題近十項。

主要承擔和參與的項目有《基於電場誘導的核酸混合自組裝分子膜屬性控制研究》，《基於脈衝激光誘導微細電火花的表面納米加工方法和原理研究》，《納尺度下生物溶液的納流變行為研究》，《超精加工用高性能硬質合金刀具表面改性技術》等研究課題。

共發表SCI期刊論文十餘篇，參加國際學術會議多次。 ^[1] 

1.D.Liu, H.Wang, K.Su, Q.Tan, B.Bai, and T.Shao, “Laser Induced Twin-Groove Surface Texturing, Based on Optical Fiber Modulation”，Laser Physics，23, (056005),2013

2.D.Liu, J.Liu, H.Wang, and T.Shao , “Laser Etching of Groove Structures with Micro-Optical Fiber Enhanced Irradiation”,Nanoscale Research Letters. 7,(318) 2012

3.J.C.Liu, D.M.Liu, and T.M. Shao,“FDTD simulation on laser-induced enhancement of electric field in the near-field apertureless probe system”，Laser Physics Letters，1–8 ，（201210012）2012.

4.D.Liu, S.J.Clark, J.Robertson, “Oxygen vacancy levels and electron transport in Al2O3”,Applied Physics Letters，96,(032905) 2010.

5.KY.Tse, D.Liu, J.Robertson, “Electronic and atomic structure of metal-HfO2 interfaces”, PHYSICAL REVIEW B, 81,(035325) 2010.

6.D.Liu, J.Robertson, “Oxygen vacancy levels and interfaces of Al2O3” Microelectronic Engineering,86(1668) 2009.

7.D. Liu, J.Robertson, “Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition” Applied Physics Letters，94,(042904) 2009.

8.L. Fonseca, D. Liu, J. Robertson, “P-type Fermi level pinning at a Si:Al2O3 model interface” Applied Physics Letters, 93, (122905) 2008.

9.K.Xiong, P.Delugas, J.C.Hooker, V.Fiorentini, J.Robertson, D.Liu, G.Pourtois,“Te-induced modulation of the Mo/HfO2 interface effective work function” Applied Physics Letters, 92, (113504) 2008.

10.K. Tse, D. Liu, J, Robertson.“Oxygen vacancies in high-k oxides” Microelectronic Engineering 84 (2028) 2007.

11.D. Liu, K.Tse, J, Robertson.“Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7” Applied Physics Letters, 90 (062901) 2007.

12.D.Liu, G.Lian, G.Xiong,“The n-Type metal-semiconductor In/Nb-SrTiO3 schottky barrier diodes” Chinese Journal of Low Temperature Physics, 26 (04) 2004. ^[1]