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朱慧
(北京工業大學電子科學與技術學院副教授)
鎖定
朱慧人物經歷
2003年畢業於中國礦業大學(北京)材料科學與工程專業,獲得學士學位。同年赴英國劍橋大學學習;
2004年畢業於劍橋大學材料專業,獲得碩士學位;
2010年畢業於劍橋大學電子工程專業,獲得博士學位;
朱慧研究方向
朱慧科研項目
主持國家自然科學基金、北京市自然科學基金、教育部博士點學科專項科研基金、教育部留學回國人員科研啓動基金、北京市教育委員會科技計劃一般項目等多個科研項目。
1、鐵電薄膜應用於鐵電隨機存儲器的失效機理研究,國家自然科學基金青年項目,2013-2015;
2、GaN HEMT 中的殘餘應力以及應力對器件性能的影響,北京市自然科學基金面上項目,2012-2014;
3、鐵電薄膜應用於鐵電隨機存儲器的失效機理研究,2013-2015,教育部博士點學科專項科研基金;
4、鐵電薄膜應用於鐵電隨機存儲器的失效機理研究,教育部留學回國人員科研啓動基金,2013-2015;
5、應力對於鐵電薄膜電學性能影響的研究,北京市教育委員會科技計劃面上項目,2016-2017;
6、AlGaN/GaN HEMT 的應力效應及其影響機理的研究,北京市自然科學基金面上項目,2016-2018;
朱慧科研論文
1. Effect of uniaxial tensile strains at different orientations on the characteristics of AlGaN/GaN High-Electron-Mobility Transistors, H. Zhu, C. Wang, et al., IEEE Transactions on Electron Devices, 67: 449 (2020);
2. Modulation of the resistive switching of BiFeO3 thin films through electrical stressing, Y. Yang, H. Zhu, et al., Journal of Applied Physics D: Applied Physics, 53: 115301 (2020);
3. A current transient method for trap analysis in resistance switching of BiFeO3 thin films, H. Zhu, Y. Yang, et al., Applied Physics Letters, 112: 182904 (2018);
4. Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs, H. Zhu, X. Meng, et al., Solid State Electronics, 145: 40 (2018);
5. Fatigue behavior of resistive switching in a BiFeO3 thin film, H. Zhu, Y. Yang, et al., Japanese Journal of Applied Physics, 57: 041501, (2018);
6. Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures, H. Zhu, Y. Zhang, et al., Applied Physics Letters 109, 252901 (2016);
7. Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3 thin films, H. Zhu, Y. Chen, et al., Japanese Journal of Applied Physics 55, 091501 (2016);
8. The effect of external stress on the electrical characteristics AlGaN/GaN HEMTs, K. Liu, H. Zhu, et al., Microelectronics Reliability 55, 886 (2015);
9. The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes, H. Zhu, K. Liu, et al., Microelectronics Reliability 55, 62 (2015).
[1]
H. Zhu, and D. P. Chu, A study of capacitance voltage characteristics of lead zirconate titanate ferroelectric thin films and their usage to investigate polarization and coercive field, J. Phys.: Condens. Matt. 23, 495901 (2011).
H. Zhu, D. P. Chu, N. A. Fleck, S. E. Rowley, and S. S. Saxena, Polarization change in ferroelectric thin film capacitors under external stress, J. Appl. Phys. 105, 061609 (2009).
H. Zhu, D. P. Chu, N. A. Fleck, I, Pane, J. E. Huber, E. Natori, Polarization change of PZTN ferroelectric thin films under uniform in-plane tensile stress, Integr. Ferroelectr. 95, 117-127 (2007).
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