徐洪起

1982年7月畢業於大連理工大學 物理系。

1991年在瑞典Lund大學獲得博士學位。

瑞典Lund大學物理系教授。

現為北京大學信息學院物理電子所教授。

主要學術及社會兼職: 美國《Physics Review B》評審員

所屬實驗室：納米器件物理與化學教育部重點實驗室

（1）半導體納米結構物理，包括生長、能譜結構、電學與光學性質等實驗與理論研究

（2）納電子器件的製作、測量、物理與應用研究

（3）凝聚態多體物理，包括強關聯、自旋糾纏等多體物理現象的實驗與理論研究

（1） 承擔和領導了十幾項由瑞典國家研究局等國家基金機構批准的研究項目

（2） 承擔或領導了兩項歐盟研究項目

（3） 正在北京大學信息科學和技術學院創建半導體納米結構實驗室

（4） 已發表SCI論文140餘篇，SCI引用2000多次

2011年度國家973重大科學研究計劃"新型高性能半導體納米線電子器件和量子器件"首席科學家

1. Jie Sun, Erik Lind, Ivan Maximov, and H. Q. Xu, Memristive and Memcapacitive Characteristics of a Au/Ti–HfO2–InP/InGaAs Diode, IEEE Electron Device Letters 32, 131 (2011).

2. L. H. Kristinsdóttir, J. C. Cremon, H. A. Nilsson, H. Q. Xu, L. Samuelson, H. Linke, A. Wacker, and S. M. Reimann, Signatures of Wigner localization in epitaxially grown nanowires, Physical Review B 83 (Rapid Communications), 041101(R) (4 pages) (2011).

3. NatthaponNakpathomkun, H. Q. Xu, and Heiner Linke, Thermoelectric efficiency at maximum power in low-dimensional systems, Physical Review B 82, 235428 (9 pages) (2010)

4. FantaoMeng, Jie Sun, MariuszGraczyk, Kailiang Zhang, Mika Prunnila, JouniAhopelto, Peixiong Shi, Jinkui Chu, Ivan Maximov, and H. Q. Xu, Nonlinear electrical properties of Si three-terminal junction devices, Applied Physics Letters 97, 242106 (3 pages) (2010).

5. FengZhai, Xiaofang Zhao, Kai Chang, and H. Q. Xu, Magnetic barrier on strained graphene: A possible valley filter, Physical Review B 82, 115442 (5 pages ) (2010).

6. H. A. Nilsson, O. Karlström, M. Larsson, P. Caroff, J. N. Pedersen, L. Samuelson, A. Wacker, L.-E. Wernersson, and H. Q. Xu, Correlation-induced conductance suppression at level degeneracy in a quantum dot, Physical Review Letters 104, 186804 (4 pages ) (2010).

7. Jie Sun, Marcus Larsson, Ivan Maximov, and H. Q. Xu, Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectric, Applied Physics Letters 96, 162107 (3 pages) (2010).

8. Jianing Chen, Gabriela Conache, Mats-Erik Pistol, Struan M. Gray, Magnus T. Borgström, HongxingXu, H. Q. Xu, Lars Samuelson, and Ulf Håkanson, Probing strain in bent semiconductor nanowires with Raman spectroscopy, Nano Letters 10, 1280–1286 (2010).

9. Fredrik Boxberg, NielsSondergaard, and H. Q. Xu, Photovoltaics with piezoelectric core-shell nanowires, Nano Letters 10, 1108–1112 (2010). 10. T. P. Martin, A. Szorkovszky, A. P. Micolich, A. R. Hamilton, C. A. Marlow, R. P. Taylor, H. Linke, and H. Q. Xu, The field-orientation dependence of the 1D enhancement in Zeeman spin-splitting in InGaAs quantum point contacts, Physical Review B 81 (Rapid Communications), 041303(R) (4 pages) (2010).

11. M. Larsson, H. A. Nilsson, H. Hardtdegen, and H. Q. Xu, g-factor and exchange energy in a few-electron lateral InGaAs quantum dot, Applied Physics Letters 95, 192112 (3 pages) (2009).

12. Henrik A. Nilsson, Philippe Caroff, ClaesThelander, Marcus Larsson, Jakob B. Wagner, Lars-Erik Wernersson, Lars Samuelson, and H. Q. Xu, Giant, level-dependent g-factors in InSb nanowire quantum dots, Nano Letters 9, 3151-3156 (2009).

13. FengZhai, Xiaofang Zhao, and H. Q. Xu, Rectification of spin-bias-induced charge currents, Applied Physics Letters 94, 262103 (3 pages) (2009).

14. P. Brusheim and H. Q. Xu, Field-driven geometrical phases in a time-periodic quantum system, Physical Review B 79, 205323 (6 pages) (2009). 15. D. Csontos, P. Brusheim, U. Zülicke, and H. Q. Xu, Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splitting, Physical Review B 79, 155323 (16 pages) (2009).

16. Jie Sun, Marcus Larsson, Ivan Maximov, Hilde Hardtdegen, H. Q. Xu, Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric, Applied Physics Letters 94, 042114 (3 pages) (2009).