劉昌

1980－1984：浙江大學無線電電子工程學系電子物理與技術專業學習，獲工學學士學位；

1984－1987：浙江大學信息與電子工程學系電子物理與器件專業學習，獲工學碩士學位；

1996－1999：德國Augsburg大學物理系，獲德國科學博士（Dr. rer. nat.）學位。

2003－現在：武漢大學物理科學與技術學院，珞珈特聘教授，博士生導師；

2004年：德國Leibniz表面改性研究所/Leipzig大學應用物理和材料科學系訪問；

2001－2003：日本National Institute of Advanced Industrial Science and Technology (Kansai Center)研究員；

2000－2001：葡萄牙Nuclear and Technological Institute博士後；

1996－1999：德國Augsburg大學物理系，獲德國DAAD獎學金；

1987－1996：武漢大學物理系助教、講師；

1989年：意大利國際理論物理中心短期進修；

中國真空學會理事，工信部半導體照明標準工作組成員，中國核物理學會常務理事，湖北省核學會常務理事，湖北省物理學會理事長，湖北省有突出貢獻優秀中青年專家，湖北省光電子產業優秀人才。國家自然科學獎評委，拔尖人才、工信部電子產業發展基金、973等評審及驗收專家，曾任IEEE International Symposium on Photonics and Optoelectronics (SOPO) 國際會議主席（2010-2012）,中韓雙邊基金委聯合資助的信息功能薄膜材料會議中方主席（2010-2011）,中韓雙邊基金委聯合資助的低維電子和光子材料與器件會議中方主席（2012-2013）；現任Current Applied Physics雜誌Topical Editor（半導體器件物理），Lead Guest Editor of Nanoscale Research Letters以及多個國際學術雜誌論文審稿人。 ^[1] 

1． 寬禁帶半導體材料和器件的外延生長及器件加工。

2． 納米材料和器件研製及其應用研究。

3． 離子束材料改性。

4． 離子注入與離子束分析。

5． 離子束輔助沉積製備功能薄膜材料。

主持科研項目：

1. 國家自然科學基金委國際會議資助項目：第二屆中韓低維電子和光子材料與器件，2013；

2. 國家自然科學基金委國際會議資助項目：第一屆中韓低維電子和光子材料與器件，2012；

3. 國家自然科學基金“離子注入製備InN基n-溝道鐵電場效應晶體管”，批准號：11175135，2012-2015；

4. 國家科技部國際合作重點項目：用於XXX的環境友好技術，2011-2013；

5. 國家自然科學基金“基於納米結構的金屬-絕緣體-金屬超大容量電容器”，批准號：11074192，2011-2013；

6. 國家自然科學基金委國際會議資助項目：第五屆中韓先進信息功能薄膜研討會，2010；

7. 湖北省自然科學基金“分子束外延製備AlGaN/AlN/GaN高電子遷移率晶體管”，批准號：2009，2009-2010；

8. 國家自然科學基金“離子注入GaN絕緣襯底上外延生長AlGaN/AlN/GaN高電子遷移率晶體管”，批准號：10775110，2008-2010；

9. 參加國家973項目“納米尺度亞光波長結構的製備、光學性質與器件研究”的子課題—“金屬基亞光波長納米結構的奇異光電性質研究”，批准號：2007CB935304，2007-2010；

10. 寬禁帶半導體和鐵電體材料異質結構研究，中國科學院上海微系統與信息技術研究所開放基金， 2008-2009；

11. 武漢市科技計劃項目“GaN大功率藍紫色發光二極管外延片研製與應用”，批准號：200710321077，2007-2009；

12. 教育部博士點基金“離子束誘發的寬禁帶半導體材料非晶化研究”，批准號：20060486047，2007-2009年；

13. 湖北省“十一五”重大科技攻關招標項目“大功率藍光外延芯片研製”，批准號：2006AA103A01， 2006-2008；

14. 湖北省“十一五”重大科技攻關招標項目“超高亮度綠光外延芯片研製”，批准號：2006AA103A02，2006-2008；

15. 湖北省“十一五”重大科技攻關招標項目“帶有靜電保護電路的硅片上倒裝焊GaN功率芯片的設計、加工和規模化生產”， 批准號：2006AA103A03，2006-2008；

16. 湖北省光電子產業優秀創新人才資助項目“GaN光電器件研製”，湖北省科技廳2006-2007；

17. 武漢市發展與改革委員會“高效節能環保型半導體白光源產業化前期關鍵技術研發”，2006-2008；

18. 國家自然科學基金“離子注入寬禁帶半導體（GaN和ZnO）非晶化研究”，批准號：10475063，2005-2007；

19. 教育部新世紀人才基金” 寬禁帶半導體材料和器件的外延生長及離子注入改性研究”，批准號：NCET-04-0671，2005-2007；

20. 湖北省科技攻關重點項目“GaN發光芯片應用研究”，批准號：2004AA101A06，2004-2007；

21. 湖北省自然科學基金“離子注入GaN局部非晶化研究”，批准號：2004ABA079，2005-2006；

22. 教育部留學回國人員基金“稀土離子摻雜GaN製備白光芯片的理論和實驗研究”，批准號： 教外司留[2004]527，2005-2006；

23. 國家自然科學基金委主任基金“稀土離子注入GaN製備白光芯片”，批准號：10345006，2004。 ^[2] 

他引270多次，單篇（第一作者他引超過50次）；10次國際會議報告（含邀請報告和大會報告）。

1. T. Wang, H. Wu, H. Zheng, J. B. Wang, Z. Wang, C. Chen, Y. Xu, and C. Liu*, Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer, Appl. Phys. Lett. 102, 141912 (2013).

2. Ying Lin, Xing Qiang Liu, Ti Wang, Chao Chen, Hao Wu, Lei Liao and Chang Liu*, Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition, Nanotechnol. 24, 125705 (Mar. 7, 2013) (5pp)。

3. T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Blue light emission from the heterostructured ZnO/InGaN/GaN, Nanoscale Research Lett. 8, 99 (2013).

4. Zhi Wei Ai, Yun Wu, Hao Wu, Ti Wang, Chao Chen, Yang Xu and Chang Liu*, Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition, Nanoscale Research Lett. 8, 105 (2013).

5. T. Wang, H. Wu, Z. Wang, C. Chen, and C. Liu*, Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer, Appl. Phys. Lett. 101, 161905 (2012).

6. T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction，IEEE Elect. Device Lett., 33, 1030 (2012).

7. Z. An, F. Q. Liu, Y. Lin, and C. Liu*, The universal definition of spin current, Sci. Rep. 2, 388 (2012).

8. T. Wang, H. Wu, C. Chen, and C. Liu*，Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers, Appl. Phys. Lett. 100, 011901 (2012).

9. Yang Pan, Zheng Wang, Ting Peng, Kemin Wu, Hao Wu, C. Liu*, Improvement of structural and electrical properties of Cu2O films with InN epilayers, J. Cryst. Growth, 334， 46 (2011).

10. Z. P. Zhou, S. J. Luo, Y. Wang, Z. W Ai, C. Liu*, D. F. Wang, Y.P. Lee, Room temperature ferromagnetism and hopping transport in amorphous CrN thin films, Thin Solid Films, 519，1989 (2011).

11. K. M. Wu, T. Han, K. Shen, B. Liu, T. Peng, Y. Pan, H. D. Sun, and C. Liu*, Growth of vertically aligned InGaN nanorod arrays on p-Type Si substrates for heterojunction diodes, J. Nanosci. Nanotechnol. 10 , 8139 (2010).

12. Y. Pan, T. Wang, K. Shen, T. Peng, K. M. Wu, W. Y. Zhang, C. Liu*, Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In, J. Cryst. Growth 313, 16 (2010).

13. T. Peng, K. Shen, H. Wu, C. Hu, and C Liu*, Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures, J. Phys. D: Appl. Phys. 43, 315101 ( 2010).

14. Q. M. Fu, T. Peng, Y. Pan and C. Liu*, Effects of AlN/GaN superlattices on structural properties of Al0.45Ga0.55N grown on AlN/sapphire templates, J. Kor. Phys. Soc., 55, 2659 (2009).

15. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, K. Shen, B. R. Zhao, C. Liu*, Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructure, J. Phys. D - Appl. Phys. 18, 185302 (2009).

16. Yuan, Longyan, Fang, Guojia, Zhou, Hai, Gao, Yihua, Liu, Chang, Zhao, Xingzhong，Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing，J. Phys. D – Appl. Phys., 42, 145302 (2009).

17. Q. M. Fu, T. Peng, C. Liu*, Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy, J. Cryst. Growth, 311, 3553 (2009).

18. B. Liu, J. Gao, K. M. Wu and C. Liu*，Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy, Solid State Commun. 149, 715 (2009).

19. Y. Tian, H. B. Lu, L. Liao, J. C. Li, C. Liu, Synthesis and evolution of hollow ZnO microspheres assisted by Zn powder precursor, Solid State Commun. 149, 456 (2009).

20. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, and C. Liu*, Temperature- and field-dependent leakage current of epitaxial YMnO3/GaN heterostructure，Appl. Phys. Lett. 94, 122904 (2009).

21. D. F. Wang, S. Y. Park, Y. S. Lee, T. W. Eom, S. J. Lee,Y. P. Lee, Ch. J. Choi, J. C. Li, and C. Liu, Epitaxial ZnMnO/ZnO Coaxial Nanocable, Crystal Growth & Design 9, 2124 (2009).

22. K. M. Wu, Y. Pan, and C. Liu*, InGaN nanorod arrays grown by molecular beam epitaxy: growth mechanism, structural and optical properties, Appl. Surf. Sci. 255, 6705 (2009).

23. Q. M. Fu, T. Peng, F. Mei, Y. Pan, L. Liao and C. Liu*，Relaxation of compressive strain by inclined threading dislocations in Al0.45Ga0.55N grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN superlattices，J. Phys. D - Appl. Phys. 42, 035311 (2009).

24. H. Li, J. P. Sang, C. Liu, H. B. Lu, J. C. Cao, Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate, Central European J Phys. 6, 638 (2008).

25. F. Mei, K. M. Wu, Y. Pan, T. Han, and C. Liu*, J. W. Gerlach, and B. Rauschenbach, Structural and optical properties of Cr-doped semi-insulating GaN epilayers, Appl. Phys. Lett. 93, 113507 (2008).

26. L. Liao, Z. Zheng, B. Yan, J. X. Zhang, H. Gong, J. C. Li, C. Liu, Z. X. Shen, and T. Yu, Morphology controllable synthesis of alpha-Fe2O3 1D nanostructures: Growth mechanism and nanodevice based on single nanowire, J. Phys. Chem. C 112, 10784 (2008).

27. L. Liao, H. X. Mai, Q. Yuan, H. B. Lu, J. C. Li, C. Liu, C. H. Yan, Z. X. Shen, T. Yu, Ting, Single CeO2 nanowire gas sensor supported with Pt nanocrystals: Gas sensitivity, surface bond states and chemical mechanism, J. Phys. Chem. C 112, 9061 (2008). Highlighted by Nature Asia Materials 06 August 2008.

28. F. Mei, Q. M. Fu, T. Peng, C. Liu*, M. Z. Peng and J. M. Zhou, Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy, J. Appl. Phys. 103, 094502 (2008)

29. F. Ren, G. X. Cai, X. H. Xiao, L. X. Fan, C. Liu, D. J. Fu, J. B. Wang, and C. Z. Jiang, Ion irradiation induced hollow and sandwiched nanoparticles, J Appl. Phys. 103, 084308 (2008).

30. L. Liao, H. B. Lu, M. Shuai, J. C. Li, Y. L. Liu, C. Liu, Z. X. Shen, and T Yu, A novel gas sensor based on field ionization from ZnO nanowires: moderate working voltage and high stability, Nanotechnol. 19, 175501 (2008).

31. D. F. Wang, S. Y. Park, Y. S. Lee, Y. P. Lee, J. C. Li, and C. Liu，Synthesis and room-temperature ferromagnetism of Zn0.96Mn0.04O/ZnO coaxial nanocable and Zn0.96Mn0.04O film，J. Appl. Phys. 103, 07D126 (2008).

32. B. Liu, Q. M. Fu, K. M. Wu, C. Liu*, Studies of the growth method and properties of AlN grown by RF-MBE, J. Kor. Phys. Soc. 52，S17 (2008).

33. L. Zhang, F. Q. Liu, and C. Liu*, Simulations of voltage-controlled yellow or orange emmision from GaN codoed with Eu and Er, J. Kor. Phys. Soc. 52，S67 (2008).

34. J. Gao, B. Liu, Y. Pan, T. Peng, K. M. Wu, C. Liu*, Effect of rapid thermal annealing on the properties of InN epilayers, J. Kor. Phys. Soc. 52，S128 (2008).

35. T. Peng, Q. M. Fu and C. Liu*, Deposition of ZnO thin films on GaN substrates, J. Kor. Phys. Soc. 52，S100 (2008).

36. X. H. Xiao, J. X. Xu, F. Ren, C. Liu, C. Z. Jiang, Fabrication of Ag nanoclusters in single-crystal MgO by high-energy ion implantation, Physica E 40, 705 (2008).

37. L. Han, F. Mei, C. Liu*, C. Pedro and E. Alves, Comparison of ZnO thin films grown by pulsed laser deposition on sapphire and Si substrates, Physica E 40, 699 (2008).

38. L. Liao, H. B. Lu, L. Zhang, M. Shuai, J. C. Li, C. Liu, D. J. Fu, and F. Ren，Effect of ferromagnetic properties in Al-doped Zn1-xCoxO nanowires synthesized by water-assistance reactive vapor deposition, J. Appl. Phys. 102, 114307 (2007).

39. X. H. Xiao, L. P. Guo, F. Ren, J. B. Wang, D. J. Fu, D. L. Chen, Z. Y. Wu, Q. J. Jia, C. Liu, C. Z. Jiang, Formation of metal nanoparticles in silica by the sequential implantation of Ag and Cu, Appl. Phys. A 89, 681 (2007).

40. L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu, and Y. L. Liu, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett., 91, 173110 (2007), selected for the November 5, 2007 issue of Virtual Journal of Nanoscale Science & Technology.

41. L. Zhang, F. Q. Liu, and C. Liu*, Voltage-controlled variable light emissions from GaN codoped with Eu, Er, and Tm, Appl. Phys. Lett. 91, 143514 (2007).

42. X. H. Xiao, F. Ren, J. B. Wang, C. Liu, C. Z. Jiang, Formation of aligned silver nanoparticles by ion implantation, Mater. Lett. 61, 4435 (2007).

43. X. H. Xiao, J. Zhu, Y. R. Li, W. B. Luo, B. F. Yu, L. X. Fan, F. Ren, C. Liu, and C Z Jiang, Greatly reduced leakage current in BiFeO3 thin film by oxygen ion implantation, J. Phys. D - Appl. Phys. 40, 5775 (2007).

44. L. Liao, K. H. Liu, W. L. Wang, X. D. Bai, E. G. Wang, Y. L. Liu, J. C. Li, and C. Liu, Multiwall Boron Carbonitride/Carbon Nanotube Junction and Its Rectification Behavior, J. Am. Chem. Soc. 129, 9562 (2007).

45. H. Li, J. P. Sang, F. Mei, F. Ren, L. Zhang, C. Liu, Observation of ferromagnetism at room temperature for Cr+ ions implanted ZnO thin films. Appl. Surf. Sci. 253, 8524 (2007).

46. L. Zhang, F. Q. Liu, C. Liu*, The influence of external electromagnetic field on an exciton spin current, J. Phys. Condens. Matter 19, 346222 (2007).

47. L. Zhang, H. C. Jiang, C. Liu*, J. W. Dong, P. Chow, Annealing of Al2O3 thin films prepared by atomic layer deposition, J. Phys. D - Appl. Phys. 40, 3707 (2007).

48. L. Liao, W. F. Zhang, H. B. Lu, J. C. Li, D. F. Wang, C. Liu, D. J. Fu, Investigation of the temperature dependence of the field emission of ZnO nanorods, Nanotechnol. 18, 225703 (2007).

49. L. Liao, Z. Xu, K. H. Liu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, J. C. Li and C. Liu, Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property, J. Appl. Phys. 101, 114306 (2007), selected for the June 18, 2007 issue of Virtual Journal of Nanoscale Science & Technology.

50. L. Liao, J. C. Li, C. Liu, Z. Xu, W. L. Wang, S. Liu, X. D. Bai, E. G. Wang, Field emission of GaN-filled carbon nanotubes: High and stable emission current, J. Nanosci. Nanotechnol. 7, 1080 (2007).

51. L. Liao, H. B. Lu, J. C. Li, H. He, D. F. Wang, D. J. Fu, C. Liu, W. F. Zhang, Size dependence of gas sensitivity of ZnO nanorods, J. Phys. Chem C 111, 1900 (2007).

52. F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, T. Oku, Controlling the morphology of Ag nanoclusters by ion implantation to different doses and subsequent annealing, Phys. Rev. Lett. 97, 165501 (2006).

53. F. Mei, C. Liu*, L. Zhang, F. Ren, L. Zhou, W. K. Zhao, Y. L. Fang, Microstructural study of binary TiO2:SiO2 nanocrystalline thin film, J. Cryst. Growth 292, 87 (2006).

54. X. Z. Shang, S. D. Wu, C. Liu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy, J. Phys. D: Appl. Phys. 39, 1800 (2006).

55. F. Mei, C. Liu*, L. Zhou, W. K. Zhao, Y. L. Fang, J. B. Wang, and Y. Y. Ren, Effect of annealing temperature on binary TiO2:SiO2 nanocrystalline thin films, J. Kor. Phys. Soc. 48, 1509 (2006).

56. F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and subsequent annealing, Appl. Phys. Lett. 88, 183114 (2006).

57. L. Chen, Z. Q. Chen, X. Z. Shang, C. Liu*, S. Xu, Q. Fu, Effect of annealing temperature on density of ZnO quantum dots, Solid State Commun. 137, 561 (2006).

58. L. Liao, J. C. Li, D. F. Wang, C. Liu, M. Z. Peng, J. M. Zhou, Size dependence of Curie temperature in Co+ ion implanted ZnO nanowires, Nanotechnol. 17, 830 (2006).

59. L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, Electron field emission studies on ZnO nanowires, Mater. Lett. 59, 2465 (2005).

60. F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135, 268 (2005).

61. L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, L. X. Fan, Field emission property improvement of ZnO nanowires coated with amorphous carbon and carbon nitride films, Nanotechnol. 16, 985 (2005).

62. C. Liu, Q. Fu, J.B. Wang, W.K. Zhao, Y.L. Fang, T. Mihara, M. Kiuchi, Structural characterization of nanocrystalline TiO2:SiO2 powders and thin film at 35 °C, J. Kor. Phys. Soc. 46, S104 (2005).

63. L. Liao, J. C. Li, D. H. Liu, C. Liu, D. F. Wang , W. Z .Song, Q. Fu, Self-assembly of aligned ZnO nanoscrews: Synthesis, growth, configuration and field emission, Appl. Phys. Lett. 86, 083106 (2005) (Cover image).

64. L. Liao, D. H. Liu, J. C. Li, C. Liu, Q. Fu, M. S. Ye, Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth, Appl. Surf. Sci. 240, 175 (2005).

65. F. Ren, C. Z. Jiang, H. B. Chen, Y. Shi, C. Liu, J. B. Wang, Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere, Physica B-CONDENSED MATTER 353, 92 (2004).

66. T. Asanuma, T. Matsutani, C. Liu, T. Mihara, and M. Kiuchi, Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma, J. Appl. Phys. 95, 6011 (2004).

67. T. Matsutani, T. Asanuma , C. Liu, M. Kiuchi , and T. Takeuchi Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane, Surf. Coat. Technol. 177-178, 365 (2004).

68. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi and T. Takeuchi, Ion-assisted chemical vapor deposition of Si-C film with organosilicon precursor, Surf. Coat. Technol. 169-170, 624 (2003).

69. C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition, Solid State Commun. 126, 509 (2003).

70. W. K. Zhao, L. Zhou, C. Liu, L. Hu, Y. Fang, and M. Kiuchi, Photocatalytic activity of TiO2 prepared by liquid phase deposition, Acta Chim. Sinica 61, 699 (2003).

71. C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 348 (2003).

72. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 343 (2003).

73. L. Zhou, C. Liu, W. Zhao, L. Hu, Y. Fang, Photocatalytic activity of Fe3+-doped TiO2 thin films prepared via liquid phase deposition, Chinese J. Catal. 24, 359 (2003).

74. C. Liu, T. Matsutani, T. Asaluma, K. Murai, M. Kiuchi, E. Alves, and M. Reis, Room-temperature growth of crystalline indium tin oxide films on glass using low energy oxygen ion beam assisted deposition, J. Appl. Phys. 93, 2262 (2003).

75. C. Liu, T. Matsutani, N. Yamamoto, and M. Kiuchi, High-quality indium tin oxide films prepared at roome temperature by oxygen ion beam assisted deposition, Europhys. Lett. 59, 606 (2002).

76. C. Liu, E. Alves, A. R. Ramos, M. F. da Silva, J. C. Soares, T. Matsutani, and M. Kiuchi, Annealing behavior and lattice location of Mn+ implanted GaN, Nucl. Instr. Meth. B, 191, 544 (2002).

77. E. Alves, C. Liu, E. B. Lopes, M. F. da Silva, J. C. Soares, J. Soares, C. Boemare, M. J. Soares, and T. Monteiro, Study of calcium ion implanted GaN, Nucl. Instr. Meth. B 190, 625 (2002).

78. T. Monteiro, C. Boemare, M. J. Soares, E. Alves, and C. Liu, Green and red emission in Ca implanted GaN samples, Physica B 308-310, 42 (2001).

79. C. Liu, A. Wenzel, B. Rauschenbach, E. Alves, A. D. Sequeira, N. Franco, M. F. da Silva, J. C. Soares, and X. J. Fan, Amorphization of GaN by ion implantation, Nucl. Instr. Meth. B 178, 200 (2001).

80. E. Alves, C. Liu, J. C. Waerenborgh, M. F. da Silva, and J. C. Soares, Study of Fe ion implanted GaN, Nucl. Instr. Meth. B, 175-177, 241 (2001).

81. C. Liu, E. Alves, A. Sequera, N. Franco, M. F. da Silva, and J. C. Soares, Fe ion implantation in GaN: damage, annealing, and lattice site location, J. Appl. Phys. 90, 81 (2001).

82. C. Liu, A. Wenzel, J. W. Gerlach, X. J. Fan, and B. Rauschenbach, Annealing study of ion implanted GaN, Surf. Coat. Technol. 128-129, 455 (2000).

83. C. Liu, Structural Characterization of Ion Implanted Gallium Nitride, Shaker, Aachen, 2000 (ISBN:3-8265-7107-X).

84. C. Liu, M. Schreck, A. Wenzel, B. Mensching, and B. Rauschenbach, Damage buildup and removal in Ca-ion implanted GaN, Appl. Phys. A 70, 53 (2000).

85. A. Wenzel, C. Liu, and B. Rauschenbach, Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN, Mater. Sci. & Eng. B 59, 191 (1999).

86. C. Liu, A. Wenzel, K. Volz, and B. Rauschenbach, Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride, Nucl. Instr. Meth. B 148, 396 (1999).

87. W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach, Raman scattering in ion-implanted GaN, Appl. Phys. Lett. 72, 2589 (1998).

88. C. Liu,, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach, Ion implantation in GaN at liquid-nitrogen temperature: structural characteristics and amorphization, Phys. Rev. B 57, 2530 (1998).

89. B. Mensching, C. Liu, B. Rauschenbach, K. Kornitzer, and W. Ritter, Characterization of Ca and C implanted GaN, Mater. Sci. & Eng. B 50, 105 (1997).

90. C. Liu, B. Mensching, K. Volz, and B. Rauschenbach, Lattice expansion of Ca and Ar ion implanted GaN, Appl. Phys. Lett. 71, 2313 (1997). ^[3]