侯清潤

1990 香港大學物理系固體物理學 博士學位 ^[2] 

東北林業大學 物理系 助教(1985-1987)

華北光電研究所 工程師(1990 – 1996)

清華大學 物理系 副教授(1999 – 至今) ^[1] 

大學本科“近代物理實驗”和 “普通物理實驗” ^[1] 

1． 過渡金屬硅化物薄膜的製備與分析

(1) Seebeck 係數和電阻率隨温度的變化

(2) 單晶薄膜的生長

2． 過渡金屬碳化物薄膜的製備與分析

(1)電阻率隨温度的變化

(2)單晶薄膜的生長

(3)薄膜的機械性能(如硬度,楊氏模量等) ^[1] 

發表研究論文30餘篇，被他人引用多次。

主要論文

Semiconductor Physics

1.Light induced rapid thermal diffusion of boron atom in silicon,

W.Q. Shi, Q.R. Hou, X.J. Liu, et al., Chinese Phys. Lett. 9, 375 (1992).

CdZnTe and HgCdTe crystal growth

1.Vertical Bridgman seeded growth of CdZnTe crystals,

Q.R. Hou, J.A. Chen, L.M. Zhao, and X.M. Zhang, Rare Metals 2, 126 (1994).

2.Vertical gradient greeze growth of CdZnTe crystals with Zn/Cd reservoir,

Q.R. Hou, J.Y. Wang, J.C, Deng, et al., Rare Metals 4, 287 (1994).

3.Vertical gradient greezing growth of HgCdTe,

Q.R. Hou, J.Y. Wang, J.C. Deng, et al., Rare Metals 14, 258 (1995).

Mechanical properties of diamond-like carbon films

1.Pulsed laser deposition of diamond-like carbon films under a magnetic field,

Q.R. Hou and J. Gao, J. Phys. Condensed Matter 9, 10333 (1997).

2.Micro-hardness and adhesion of boron carbon nitride coatings,

Q.R. Hou and J. Gao, Mod. Phys. Lett. B 11, 749 (1997).

3.Adherent SiC coatings on Ni-Cr alloys with a composition-graded interlayer,

Q.R. Hou, J. Gao, and S.J. Li, Appl. Phys. A 67, 367 (1998).

4.Influence of a magnetic field on deposition of DLC films,

Q.R. Hou and J. Gao, Appl. Phys. A 67, 417 (1998).

5.Enhanced adhesion of DLC films with a composition-graed intermediate layer,

Q.R. Hou and J. Gao, Appl. Phys. A 68, 343 (1999).

6.Adhesion and its influence on micro-hardness of DLC and SiC films,

Q.R. Hou, J. Gao, S.J. Li, Eur. Phys. J. B 8, 493 (1999).

Thermoelectric properties of transition metal silicides

1.Preparation of adherent MnSix films,

Q.R. Hou, Z.M. Wang, Y.B. Chen, and Y.J. He, Mod. Phys. Lett. B 16, 205(2002).

2.The effect of oxygen on the formation of manganese silicide,

Q.R. Hou, Z.M. Wang, and Y.J. He, Mod. Phys. Lett. B 16, 1135 (2002)

3. Thermoelectric properties of manganese silicide films，

Q. R. HOU, Z. M. WANG, Y. J. HE, Appl. Phys.A 80, 1807 (2005).

4. Thermoelectric properties of higher manganese silicide films with addition of carbon，

Q. R. HOU, W. ZHAO, H. Y. ZHANG, Y. B. CHEN, Y. J. HE,

Phys. Status SolidiA 203, 2468 (2006).

5. Mechanical and thermoelectric properties of higher manganese silicide films

Q. R. HOU, Y. B. CHEN, Y. J. HE, Mod. Phys. Lett.B 20, 877 (2006).

6. Thermoelectric properties of higher manganese silicide films with addition of chromium，

Q.R.Hou, W.Zhao,Y.B,Chen,D.Liang,X.Feng, H.Y.Zhang and Y.J.He,Appl. Phys.A86，385（2007）

7.Characterization of p- and n-type MnSi1.7films by Auger electron spectroscopy

Q.R.Hou, W.Zhao,H.Y.Zhang, Y.B,Chen and Y.J.He,

Mod. Phys. Lett.B 21, 1077 (2007).

8.Thermoelectric properties of p-type higher manganese silicide films prepared by solid phase reaction and reactive deposition，

Q.R.Hou, W.Zhao,Y.B,Chen,D.Liang,X.Feng, H.Y.Zhang and Y.J.He,Phys. Stat. Sol.(a)204, 3429 (2007).

9.Thermoelectric properties of MnSi1.7films with addition of aluminum and carbon

Q.R.Hou, D.Liang, X.Feng, W.Zhao, Y.B.Chen, Y.J.He,Mod. Phys. Lett.B 21, 1447(2007).

10. Thermoelectric power of nanoscale MnSi1.7films

Q.R.Hou, W.Zhao, Y.B.Chen, and Y,.J.He,Phys. Stat. Sol.A205, 2687 (2008).

11. Preparation of n-type higher manganese silicide films by magnetron sputtering

Q.R.Hou, W.Zhao*, Y.B.Chen, and Y.J.He,Int. J. Mod. Phys.B 23, 3331(2009).

12. Influence of oxygen impurity on Seebeck coefficient of nano-scale MnSi1.7films

Q. R. Hou, Y. B. Chen, Y. J. He,Mod. Phys. Lett.B 23, 2421 (2009).

13. Preparation of n-type nano-scale MnSi1.7films by addition of iron

Q.R.Hou, W.Zhao*, Y.B.Chen, and Y.J.He,Mater. Chem. Phys.121, 103(2010).

14. Seebeck effect of nano-scale p-type silicon films above room temperature

Q. R. Hou, B. F. Gu, Y. B. Chen,Mod. Phys. Lett.B 24, 2457(2010).

15. Preparation of nano-crystalline SiC films with high Seebeck coefficient and low electrical resistivity,

Q.R.HOU, B.F.GU, Y.B.CHEN,NANO6(2011) 167.

16. Enhancement of thermoelectric power factor by a silicon spacer in modulation-doped Si-HMS-Si,

Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE,NANO6(2011) 481.

17. Influence of silicon addition on Seebeck coefficient of MnSi1.7films

Q. R. HOU, B.F.GU, Y. B. CHEN, Y. J. HE,Int. J. Mod. Phys.B 25(2011) 2393.

18. Phonon-drag effect of ultra-thin FeSi2and MnSi1.7/ FeSi2films

Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE,Mod. Phys. Lett.B 25(2011) 1829.

19. Thermoelectric properties of MnSi1.7, Y.J.HE, Q. R. HOU, Z.M.WANG,

Y. B. CHEN,Proceedings of 2011 International conference on materials for renewable energy and environment, IEEE, Shanghai, China,(2011) 1343.

20. Magnetic properties of Fe0.95Co0.05Si2semiconducting film,

Y.P.HAN, X.J.WANG, Q.R.HOU, Q.W.WANG, J.X.WANG,.Mod. Phys. Lett.B 26(2012) 1250097.

21. Thermoelectric effect of silicon films with shallow- and deep-level acceptors,

Q.R.HOU, J.L.SUN, B.F.GU, Y.B.CHEN, Y.J.HE,

Int. J. Mod. Phys.B 26(2012) 1250187.

22. Thermoelectric effect of silicon films prepared by aluminum-induced crystallization,

Q.R.HOU, B.F.GU, Y.B.CHEN, Y.J.HE,International Journal of Minerals, Metallurgy and Materials19(2012) 957.

23. Enhancement of thermoelectric power factor of MnSi1.7films by Si addition and modulation doping,

Q.R. HOU, B.F.GU, Y.B.CHEN, Y.J.HE,Phys. Status SolidiA209(2012) 1307. ^[1]